Zero bias anomalies in metal-semiconductor tunnel junctions

E. L. Wolf, D. L. Losee

Research output: Contribution to journalArticle

Abstract

Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T 1 for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.

Original languageEnglish (US)
Pages (from-to)665-668
Number of pages4
JournalSolid State Communications
Volume7
Issue number9
StatePublished - May 1 1969

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Tunnel junctions
solidus
Magnetic moments
tunnel junctions
depletion
magnetic moments
Metals
Semiconductor materials
anomalies
shift
metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Zero bias anomalies in metal-semiconductor tunnel junctions. / Wolf, E. L.; Losee, D. L.

In: Solid State Communications, Vol. 7, No. 9, 01.05.1969, p. 665-668.

Research output: Contribution to journalArticle

Wolf, EL & Losee, DL 1969, 'Zero bias anomalies in metal-semiconductor tunnel junctions', Solid State Communications, vol. 7, no. 9, pp. 665-668.
Wolf, E. L. ; Losee, D. L. / Zero bias anomalies in metal-semiconductor tunnel junctions. In: Solid State Communications. 1969 ; Vol. 7, No. 9. pp. 665-668.
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