Waveguide-integrated Ge p-i-n photodetectors on SOI platform

J. F. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Y. Hong, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, Mahmoud Rasras, A. White, D. M. Gill

    Research output: Contribution to journalConference article

    Abstract

    We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

    Original languageEnglish (US)
    Article number1708203
    Pages (from-to)173-175
    Number of pages3
    JournalIEEE International Conference on Group IV Photonics GFP
    StatePublished - Dec 1 2006
    Event2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada
    Duration: Sep 13 2006Sep 15 2006

    Fingerprint

    Photodetectors
    Waveguides
    Bandwidth

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Ceramics and Composites
    • Electronic, Optical and Magnetic Materials

    Cite this

    Liu, J. F., Pan, D., Jongthammanurak, S., Ahn, D., Hong, C. Y., Beals, M., ... Gill, D. M. (2006). Waveguide-integrated Ge p-i-n photodetectors on SOI platform. IEEE International Conference on Group IV Photonics GFP, 173-175. [1708203].

    Waveguide-integrated Ge p-i-n photodetectors on SOI platform. / Liu, J. F.; Pan, D.; Jongthammanurak, S.; Ahn, D.; Hong, C. Y.; Beals, M.; Kimerling, L. C.; Michel, J.; Pomerene, A. T.; Hill, C.; Jaso, M.; Tu, K. Y.; Chen, Y. K.; Patel, S.; Rasras, Mahmoud; White, A.; Gill, D. M.

    In: IEEE International Conference on Group IV Photonics GFP, 01.12.2006, p. 173-175.

    Research output: Contribution to journalConference article

    Liu, JF, Pan, D, Jongthammanurak, S, Ahn, D, Hong, CY, Beals, M, Kimerling, LC, Michel, J, Pomerene, AT, Hill, C, Jaso, M, Tu, KY, Chen, YK, Patel, S, Rasras, M, White, A & Gill, DM 2006, 'Waveguide-integrated Ge p-i-n photodetectors on SOI platform', IEEE International Conference on Group IV Photonics GFP, pp. 173-175.
    Liu JF, Pan D, Jongthammanurak S, Ahn D, Hong CY, Beals M et al. Waveguide-integrated Ge p-i-n photodetectors on SOI platform. IEEE International Conference on Group IV Photonics GFP. 2006 Dec 1;173-175. 1708203.
    Liu, J. F. ; Pan, D. ; Jongthammanurak, S. ; Ahn, D. ; Hong, C. Y. ; Beals, M. ; Kimerling, L. C. ; Michel, J. ; Pomerene, A. T. ; Hill, C. ; Jaso, M. ; Tu, K. Y. ; Chen, Y. K. ; Patel, S. ; Rasras, Mahmoud ; White, A. ; Gill, D. M. / Waveguide-integrated Ge p-i-n photodetectors on SOI platform. In: IEEE International Conference on Group IV Photonics GFP. 2006 ; pp. 173-175.
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    title = "Waveguide-integrated Ge p-i-n photodetectors on SOI platform",
    abstract = "We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.",
    author = "Liu, {J. F.} and D. Pan and S. Jongthammanurak and D. Ahn and Hong, {C. Y.} and M. Beals and Kimerling, {L. C.} and J. Michel and Pomerene, {A. T.} and C. Hill and M. Jaso and Tu, {K. Y.} and Chen, {Y. K.} and S. Patel and Mahmoud Rasras and A. White and Gill, {D. M.}",
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    T1 - Waveguide-integrated Ge p-i-n photodetectors on SOI platform

    AU - Liu, J. F.

    AU - Pan, D.

    AU - Jongthammanurak, S.

    AU - Ahn, D.

    AU - Hong, C. Y.

    AU - Beals, M.

    AU - Kimerling, L. C.

    AU - Michel, J.

    AU - Pomerene, A. T.

    AU - Hill, C.

    AU - Jaso, M.

    AU - Tu, K. Y.

    AU - Chen, Y. K.

    AU - Patel, S.

    AU - Rasras, Mahmoud

    AU - White, A.

    AU - Gill, D. M.

    PY - 2006/12/1

    Y1 - 2006/12/1

    N2 - We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

    AB - We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

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    M3 - Conference article

    SP - 173

    EP - 175

    JO - IEEE International Conference on Group IV Photonics GFP

    JF - IEEE International Conference on Group IV Photonics GFP

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