Waveguide-integrated Ge p-i-n photodetectors on SOI platform

J. F. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Y. Hong, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, Mahmoud Rasras, A. White, D. M. Gill

Research output: Contribution to journalConference article

Abstract

We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

Original languageEnglish (US)
Article number1708203
Pages (from-to)173-175
Number of pages3
JournalIEEE International Conference on Group IV Photonics GFP
StatePublished - Dec 1 2006
Event2006 3rd IEEE International Conference on Group IV Photonics, GFP 2006 - Ottawa, ON, Canada
Duration: Sep 13 2006Sep 15 2006

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Photodetectors
Waveguides
Bandwidth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Liu, J. F., Pan, D., Jongthammanurak, S., Ahn, D., Hong, C. Y., Beals, M., ... Gill, D. M. (2006). Waveguide-integrated Ge p-i-n photodetectors on SOI platform. IEEE International Conference on Group IV Photonics GFP, 173-175. [1708203].

Waveguide-integrated Ge p-i-n photodetectors on SOI platform. / Liu, J. F.; Pan, D.; Jongthammanurak, S.; Ahn, D.; Hong, C. Y.; Beals, M.; Kimerling, L. C.; Michel, J.; Pomerene, A. T.; Hill, C.; Jaso, M.; Tu, K. Y.; Chen, Y. K.; Patel, S.; Rasras, Mahmoud; White, A.; Gill, D. M.

In: IEEE International Conference on Group IV Photonics GFP, 01.12.2006, p. 173-175.

Research output: Contribution to journalConference article

Liu, JF, Pan, D, Jongthammanurak, S, Ahn, D, Hong, CY, Beals, M, Kimerling, LC, Michel, J, Pomerene, AT, Hill, C, Jaso, M, Tu, KY, Chen, YK, Patel, S, Rasras, M, White, A & Gill, DM 2006, 'Waveguide-integrated Ge p-i-n photodetectors on SOI platform', IEEE International Conference on Group IV Photonics GFP, pp. 173-175.
Liu JF, Pan D, Jongthammanurak S, Ahn D, Hong CY, Beals M et al. Waveguide-integrated Ge p-i-n photodetectors on SOI platform. IEEE International Conference on Group IV Photonics GFP. 2006 Dec 1;173-175. 1708203.
Liu, J. F. ; Pan, D. ; Jongthammanurak, S. ; Ahn, D. ; Hong, C. Y. ; Beals, M. ; Kimerling, L. C. ; Michel, J. ; Pomerene, A. T. ; Hill, C. ; Jaso, M. ; Tu, K. Y. ; Chen, Y. K. ; Patel, S. ; Rasras, Mahmoud ; White, A. ; Gill, D. M. / Waveguide-integrated Ge p-i-n photodetectors on SOI platform. In: IEEE International Conference on Group IV Photonics GFP. 2006 ; pp. 173-175.
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AU - Liu, J. F.

AU - Pan, D.

AU - Jongthammanurak, S.

AU - Ahn, D.

AU - Hong, C. Y.

AU - Beals, M.

AU - Kimerling, L. C.

AU - Michel, J.

AU - Pomerene, A. T.

AU - Hill, C.

AU - Jaso, M.

AU - Tu, K. Y.

AU - Chen, Y. K.

AU - Patel, S.

AU - Rasras, Mahmoud

AU - White, A.

AU - Gill, D. M.

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AB - We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

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