Visualizing radical-surface interactions in plasma deposition processes: reactivity of SiH3 radicals with Si surfaces

Shyam Ramalingam, Dimitrios Maroudas, Eray Aydil

Research output: Contribution to journalArticle

Abstract

There is a need for improving our fundamental understanding of the radical surface interactions during plasma enhanced chemical vapor deposition of Si. Toward this goal, we have calculated the interaction energy between SiH3 radicals and various Si surfaces, and mapped the changes in this energy as a function of position on the surface. Application of this analysis to the SiH3 radical impinging on a variety of Si surfaces, coupled with detailed investigation of the radical impingement dynamics, proved valuable in understanding and visualizing the driving forces that determine the nature of the radical-surface interactions during plasma deposition of Si.

Original languageEnglish (US)
Pages (from-to)104-105
Number of pages2
JournalIEEE Transactions on Plasma Science
Volume27
Issue number1
DOIs
StatePublished - Jan 1 1999

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surface reactions
reactivity
impingement
vapor deposition
energy
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

Cite this

Visualizing radical-surface interactions in plasma deposition processes : reactivity of SiH3 radicals with Si surfaces. / Ramalingam, Shyam; Maroudas, Dimitrios; Aydil, Eray.

In: IEEE Transactions on Plasma Science, Vol. 27, No. 1, 01.01.1999, p. 104-105.

Research output: Contribution to journalArticle

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