Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

Erik Edelberg, Sam Bergh, Ryan Naone, Michael Hall, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)1415-1417
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number10
DOIs
StatePublished - Dec 1 1996

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silicon films
vapor deposition
luminescence
porous silicon
photoluminescence
electromagnetic spectra
optoelectronic devices
light emission
dissolving
transmission electron microscopy
high resolution
room temperature
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition. / Edelberg, Erik; Bergh, Sam; Naone, Ryan; Hall, Michael; Aydil, Eray.

In: Applied Physics Letters, Vol. 68, No. 10, 01.12.1996, p. 1415-1417.

Research output: Contribution to journalArticle

Edelberg, Erik ; Bergh, Sam ; Naone, Ryan ; Hall, Michael ; Aydil, Eray. / Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition. In: Applied Physics Letters. 1996 ; Vol. 68, No. 10. pp. 1415-1417.
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