Variability in synthetic MoS2 devices: Effect of the growth substrate

Abdullah Alharbi, Davood Shahrjerdi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Implementing a realistic electronic system from transition metal dichalcogenides (TMDs) relies on the ability to produce high-performance devices with homogenous properties. Continuing progress on large-area growth techniques, e.g. chemical vapor deposition (CVD) has improved the optical and electrical properties of monolayer TMDs, including MoS2. However, reducing device-to-device variations remains a challenge [1]-[2], spurring new investigations to understand the physical origins of this problem in TMD devices. Here, we show that the strong coupling between the as-grown monolayer MoS2 and the SiO2 growth substrate causes (1) significant inhomogeneity in the electrical properties of the transistors and (2) significant degradation of the device metrics including carrier mobility and contact resistance. By reducing the binding energy, and thus increasing the van der Waals gap, between the MoS2 and the original growth substrate using our new gold-assisted layer transfer, we observe remarkable improvements in key device metrics (~7× in mobility and ~100× in contact resistance) and device variability (~10×).

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2018-June
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

Fingerprint

Transition metals
Contact resistance
Monolayers
Electric properties
Substrates
Carrier mobility
Binding energy
Chemical vapor deposition
Transistors
Optical properties
Gold
Degradation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Alharbi, A., & Shahrjerdi, D. (2018). Variability in synthetic MoS2 devices: Effect of the growth substrate. In 2018 76th Device Research Conference, DRC 2018 (Vol. 2018-June). [8442254] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442254

Variability in synthetic MoS2 devices : Effect of the growth substrate. / Alharbi, Abdullah; Shahrjerdi, Davood.

2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018. 8442254.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alharbi, A & Shahrjerdi, D 2018, Variability in synthetic MoS2 devices: Effect of the growth substrate. in 2018 76th Device Research Conference, DRC 2018. vol. 2018-June, 8442254, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 6/24/18. https://doi.org/10.1109/DRC.2018.8442254
Alharbi A, Shahrjerdi D. Variability in synthetic MoS2 devices: Effect of the growth substrate. In 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June. Institute of Electrical and Electronics Engineers Inc. 2018. 8442254 https://doi.org/10.1109/DRC.2018.8442254
Alharbi, Abdullah ; Shahrjerdi, Davood. / Variability in synthetic MoS2 devices : Effect of the growth substrate. 2018 76th Device Research Conference, DRC 2018. Vol. 2018-June Institute of Electrical and Electronics Engineers Inc., 2018.
@inproceedings{80802a29a5c149d0b8080759e53d48a7,
title = "Variability in synthetic MoS2 devices: Effect of the growth substrate",
abstract = "Implementing a realistic electronic system from transition metal dichalcogenides (TMDs) relies on the ability to produce high-performance devices with homogenous properties. Continuing progress on large-area growth techniques, e.g. chemical vapor deposition (CVD) has improved the optical and electrical properties of monolayer TMDs, including MoS2. However, reducing device-to-device variations remains a challenge [1]-[2], spurring new investigations to understand the physical origins of this problem in TMD devices. Here, we show that the strong coupling between the as-grown monolayer MoS2 and the SiO2 growth substrate causes (1) significant inhomogeneity in the electrical properties of the transistors and (2) significant degradation of the device metrics including carrier mobility and contact resistance. By reducing the binding energy, and thus increasing the van der Waals gap, between the MoS2 and the original growth substrate using our new gold-assisted layer transfer, we observe remarkable improvements in key device metrics (~7× in mobility and ~100× in contact resistance) and device variability (~10×).",
author = "Abdullah Alharbi and Davood Shahrjerdi",
year = "2018",
month = "8",
day = "20",
doi = "10.1109/DRC.2018.8442254",
language = "English (US)",
isbn = "9781538630280",
volume = "2018-June",
booktitle = "2018 76th Device Research Conference, DRC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Variability in synthetic MoS2 devices

T2 - Effect of the growth substrate

AU - Alharbi, Abdullah

AU - Shahrjerdi, Davood

PY - 2018/8/20

Y1 - 2018/8/20

N2 - Implementing a realistic electronic system from transition metal dichalcogenides (TMDs) relies on the ability to produce high-performance devices with homogenous properties. Continuing progress on large-area growth techniques, e.g. chemical vapor deposition (CVD) has improved the optical and electrical properties of monolayer TMDs, including MoS2. However, reducing device-to-device variations remains a challenge [1]-[2], spurring new investigations to understand the physical origins of this problem in TMD devices. Here, we show that the strong coupling between the as-grown monolayer MoS2 and the SiO2 growth substrate causes (1) significant inhomogeneity in the electrical properties of the transistors and (2) significant degradation of the device metrics including carrier mobility and contact resistance. By reducing the binding energy, and thus increasing the van der Waals gap, between the MoS2 and the original growth substrate using our new gold-assisted layer transfer, we observe remarkable improvements in key device metrics (~7× in mobility and ~100× in contact resistance) and device variability (~10×).

AB - Implementing a realistic electronic system from transition metal dichalcogenides (TMDs) relies on the ability to produce high-performance devices with homogenous properties. Continuing progress on large-area growth techniques, e.g. chemical vapor deposition (CVD) has improved the optical and electrical properties of monolayer TMDs, including MoS2. However, reducing device-to-device variations remains a challenge [1]-[2], spurring new investigations to understand the physical origins of this problem in TMD devices. Here, we show that the strong coupling between the as-grown monolayer MoS2 and the SiO2 growth substrate causes (1) significant inhomogeneity in the electrical properties of the transistors and (2) significant degradation of the device metrics including carrier mobility and contact resistance. By reducing the binding energy, and thus increasing the van der Waals gap, between the MoS2 and the original growth substrate using our new gold-assisted layer transfer, we observe remarkable improvements in key device metrics (~7× in mobility and ~100× in contact resistance) and device variability (~10×).

UR - http://www.scopus.com/inward/record.url?scp=85053224226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053224226&partnerID=8YFLogxK

U2 - 10.1109/DRC.2018.8442254

DO - 10.1109/DRC.2018.8442254

M3 - Conference contribution

SN - 9781538630280

VL - 2018-June

BT - 2018 76th Device Research Conference, DRC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -