Variability in carbon nanotube transistors: Improving device-to-device consistency

Aaron D. Franklin, George S. Tulevski, Shu Jen Han, Davood Shahrjerdi, Qing Cao, Hong Yu Chen, H. S Philip Wong, Wilfried Haensch

Research output: Contribution to journalArticle

Abstract

The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.

Original languageEnglish (US)
Pages (from-to)1109-1115
Number of pages7
JournalACS Nano
Volume6
Issue number2
DOIs
StatePublished - Feb 28 2012

Fingerprint

Carbon Nanotubes
Hysteresis
Carbon nanotubes
Transistors
transistors
carbon nanotubes
hysteresis
Threshold voltage
threshold voltage
electric potential
Passivation
Nanotubes
passivity
Monolayers
nanotubes
coverings
Substrates

Keywords

  • carbon nanotube transistors
  • CNTFET
  • hysteresis
  • threshold voltage
  • variability

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Franklin, A. D., Tulevski, G. S., Han, S. J., Shahrjerdi, D., Cao, Q., Chen, H. Y., ... Haensch, W. (2012). Variability in carbon nanotube transistors: Improving device-to-device consistency. ACS Nano, 6(2), 1109-1115. https://doi.org/10.1021/nn203516z

Variability in carbon nanotube transistors : Improving device-to-device consistency. / Franklin, Aaron D.; Tulevski, George S.; Han, Shu Jen; Shahrjerdi, Davood; Cao, Qing; Chen, Hong Yu; Wong, H. S Philip; Haensch, Wilfried.

In: ACS Nano, Vol. 6, No. 2, 28.02.2012, p. 1109-1115.

Research output: Contribution to journalArticle

Franklin, AD, Tulevski, GS, Han, SJ, Shahrjerdi, D, Cao, Q, Chen, HY, Wong, HSP & Haensch, W 2012, 'Variability in carbon nanotube transistors: Improving device-to-device consistency', ACS Nano, vol. 6, no. 2, pp. 1109-1115. https://doi.org/10.1021/nn203516z
Franklin, Aaron D. ; Tulevski, George S. ; Han, Shu Jen ; Shahrjerdi, Davood ; Cao, Qing ; Chen, Hong Yu ; Wong, H. S Philip ; Haensch, Wilfried. / Variability in carbon nanotube transistors : Improving device-to-device consistency. In: ACS Nano. 2012 ; Vol. 6, No. 2. pp. 1109-1115.
@article{628c421015f542178f2c6b6a8916ebd9,
title = "Variability in carbon nanotube transistors: Improving device-to-device consistency",
abstract = "The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53{\%}, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.",
keywords = "carbon nanotube transistors, CNTFET, hysteresis, threshold voltage, variability",
author = "Franklin, {Aaron D.} and Tulevski, {George S.} and Han, {Shu Jen} and Davood Shahrjerdi and Qing Cao and Chen, {Hong Yu} and Wong, {H. S Philip} and Wilfried Haensch",
year = "2012",
month = "2",
day = "28",
doi = "10.1021/nn203516z",
language = "English (US)",
volume = "6",
pages = "1109--1115",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Variability in carbon nanotube transistors

T2 - Improving device-to-device consistency

AU - Franklin, Aaron D.

AU - Tulevski, George S.

AU - Han, Shu Jen

AU - Shahrjerdi, Davood

AU - Cao, Qing

AU - Chen, Hong Yu

AU - Wong, H. S Philip

AU - Haensch, Wilfried

PY - 2012/2/28

Y1 - 2012/2/28

N2 - The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.

AB - The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.

KW - carbon nanotube transistors

KW - CNTFET

KW - hysteresis

KW - threshold voltage

KW - variability

UR - http://www.scopus.com/inward/record.url?scp=84863230306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863230306&partnerID=8YFLogxK

U2 - 10.1021/nn203516z

DO - 10.1021/nn203516z

M3 - Article

C2 - 22272749

AN - SCOPUS:84863230306

VL - 6

SP - 1109

EP - 1115

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -