Abstract
Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.
| Original language | English (US) |
|---|---|
| Title of host publication | American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers |
| State | Published - Dec 1 2008 |
| Event | 235th National Meeting of the American Chemical Society, ACS 2008 - New Orleans, LA, United States Duration: Apr 6 2008 → Apr 10 2008 |
Other
| Other | 235th National Meeting of the American Chemical Society, ACS 2008 |
|---|---|
| Country | United States |
| City | New Orleans, LA |
| Period | 4/6/08 → 4/10/08 |
Fingerprint
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
Cite this
Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces. / Carlson, Brooke A.; Leschkies, Kurtis; Aydil, Eray; Zhu, Xiaoyang.
American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers. 2008.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces
AU - Carlson, Brooke A.
AU - Leschkies, Kurtis
AU - Aydil, Eray
AU - Zhu, Xiaoyang
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.
AB - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.
UR - http://www.scopus.com/inward/record.url?scp=77955593372&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955593372&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77955593372
SN - 9780841269859
BT - American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers
ER -