Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia

Shawn S. Coffee, Wyatt A. Winkenwerder, Scott K. Stanley, Davood Shahrjerdi, Sanjay K. Banerjee, John G. Ekerdt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.

Original languageEnglish (US)
Title of host publicationNanomanufacturing
Pages158-163
Number of pages6
Volume921
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

Fingerprint

Germanium
Self assembly
Chemical vapor deposition
Growth temperature
Nanoparticles
Styrene
Adatoms
Methacrylates
Block copolymers
Masks
Etching
Monolayers
Nucleation
Wire
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Coffee, S. S., Winkenwerder, W. A., Stanley, S. K., Shahrjerdi, D., Banerjee, S. K., & Ekerdt, J. G. (2006). Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. In Nanomanufacturing (Vol. 921, pp. 158-163)

Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. / Coffee, Shawn S.; Winkenwerder, Wyatt A.; Stanley, Scott K.; Shahrjerdi, Davood; Banerjee, Sanjay K.; Ekerdt, John G.

Nanomanufacturing. Vol. 921 2006. p. 158-163.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Coffee, SS, Winkenwerder, WA, Stanley, SK, Shahrjerdi, D, Banerjee, SK & Ekerdt, JG 2006, Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. in Nanomanufacturing. vol. 921, pp. 158-163, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/17/06.
Coffee SS, Winkenwerder WA, Stanley SK, Shahrjerdi D, Banerjee SK, Ekerdt JG. Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. In Nanomanufacturing. Vol. 921. 2006. p. 158-163
Coffee, Shawn S. ; Winkenwerder, Wyatt A. ; Stanley, Scott K. ; Shahrjerdi, Davood ; Banerjee, Sanjay K. ; Ekerdt, John G. / Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. Nanomanufacturing. Vol. 921 2006. pp. 158-163
@inproceedings{e5d461387c59424ea993602b111026b4,
title = "Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia",
abstract = "Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.",
author = "Coffee, {Shawn S.} and Winkenwerder, {Wyatt A.} and Stanley, {Scott K.} and Davood Shahrjerdi and Banerjee, {Sanjay K.} and Ekerdt, {John G.}",
year = "2006",
language = "English (US)",
isbn = "1558998780",
volume = "921",
pages = "158--163",
booktitle = "Nanomanufacturing",

}

TY - GEN

T1 - Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia

AU - Coffee, Shawn S.

AU - Winkenwerder, Wyatt A.

AU - Stanley, Scott K.

AU - Shahrjerdi, Davood

AU - Banerjee, Sanjay K.

AU - Ekerdt, John G.

PY - 2006

Y1 - 2006

N2 - Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.

AB - Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.

UR - http://www.scopus.com/inward/record.url?scp=33947693202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947693202&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558998780

SN - 9781558998780

VL - 921

SP - 158

EP - 163

BT - Nanomanufacturing

ER -