Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

Davood Shahrjerdi, Michael M. Oye, Archie L. Holmes, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO 2 high-κ dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D it) of 5 × 10 11 eV -L cm -2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 °C appears to significantly reduce the midgap D it revealed by probing the frequency dispersion behavior of the MOSCAPs.

Original languageEnglish (US)
Article number043501
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
StatePublished - 2006

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metal oxide semiconductors
capacitors
fabrication
molecular beam epitaxy
metals
integrity
germanium
magnetron sputtering
annealing
oxides
silicon
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Unpinned metal gate/high-κ GaAs capacitors : Fabrication and characterization. / Shahrjerdi, Davood; Oye, Michael M.; Holmes, Archie L.; Banerjee, Sanjay K.

In: Applied Physics Letters, Vol. 89, No. 4, 043501, 2006.

Research output: Contribution to journalArticle

Shahrjerdi, Davood ; Oye, Michael M. ; Holmes, Archie L. ; Banerjee, Sanjay K. / Unpinned metal gate/high-κ GaAs capacitors : Fabrication and characterization. In: Applied Physics Letters. 2006 ; Vol. 89, No. 4.
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