Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

H. Liu, D. Bedau, D. Backes, J. A. Katine, J. Langer, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

    Original languageEnglish (US)
    Article number242510
    JournalApplied Physics Letters
    Volume97
    Issue number24
    DOIs
    StatePublished - Dec 13 2010

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    tunnel junctions
    random access memory
    pulse amplitude
    torque
    polarity
    energy
    room temperature
    pulses

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Liu, H., Bedau, D., Backes, D., Katine, J. A., Langer, J., & Kent, A. D. (2010). Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. Applied Physics Letters, 97(24), [242510]. https://doi.org/10.1063/1.3527962

    Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. / Liu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Langer, J.; Kent, A. D.

    In: Applied Physics Letters, Vol. 97, No. 24, 242510, 13.12.2010.

    Research output: Contribution to journalArticle

    Liu, H, Bedau, D, Backes, D, Katine, JA, Langer, J & Kent, AD 2010, 'Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices', Applied Physics Letters, vol. 97, no. 24, 242510. https://doi.org/10.1063/1.3527962
    Liu, H. ; Bedau, D. ; Backes, D. ; Katine, J. A. ; Langer, J. ; Kent, A. D. / Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. In: Applied Physics Letters. 2010 ; Vol. 97, No. 24.
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