Tunneling characteristics of trilayer tunnel junctions

B. F. Donovan-Vojtovic, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.

    Original languageEnglish (US)
    Pages (from-to)563-565
    Number of pages3
    JournalSolid State Communications
    Volume31
    Issue number8
    DOIs
    StatePublished - 1979

    Fingerprint

    Tunnel junctions
    Phonons
    tunnel junctions
    phonons
    Metals
    metals
    interference
    Electron tunneling
    electron tunneling
    Oxides
    oxides
    probes

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Tunneling characteristics of trilayer tunnel junctions. / Donovan-Vojtovic, B. F.; Chaikin, P. M.

    In: Solid State Communications, Vol. 31, No. 8, 1979, p. 563-565.

    Research output: Contribution to journalArticle

    Donovan-Vojtovic, B. F. ; Chaikin, P. M. / Tunneling characteristics of trilayer tunnel junctions. In: Solid State Communications. 1979 ; Vol. 31, No. 8. pp. 563-565.
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    abstract = "We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 {\AA} and the Pb thickness being 3000 {\AA}. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 {\AA} thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.",
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