Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium

B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. D. Robertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The tunneling and depletion-mode of poly-Ge thin film transistors (TFT), fabricated by low-temperature as low as 150°C and 200°C respectively, along with stress-assisted Cu-induced lateral growth and metal-free crystallization, were analyzed. Mechanical compressive stress was applied during annealing by bending the flexible polyethylene (PET) substrates inward. The depletionn-mode TFTs were fabricated based on metal-free crystallization of Ge by hydrogenation and annealing. The results show the scanning electron microscopy (SEM) surface morphology of the Ge layer after a series of hydrogenation and annealing steps in a 150 Watt RF hydrogen plasma at 2000°C using a plasma enhanced chemical vapor deposition (PECVD) machine.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages87-88
Number of pages2
DOIs
StatePublished - Dec 1 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: Jun 21 2004Jun 23 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

OtherDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period6/21/046/23/04

ASJC Scopus subject areas

  • Engineering(all)

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    Hekmatshoar, B., Mohajerzadeh, S., Shahrjerdi, D., & Robertson, M. D. (2004). Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium. In Device Research Conference - Conference Digest, 62nd DRC (pp. 87-88). [III.-18] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367796