Transport properties of tetrathiotetracene iodide (TTT2I3-) at low temperatures

S. K. Khanna, W. W. Fuller, G. Grner, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    We have performed a series of transport measurements on tetrathiotetracene iodide (TTT2I3-) samples with varying degrees of disorder. These measurements include electrical conductivity from 300 to 0.2 K, magnetoresistance from 30 to 1.5 K, and magnetothermopower from 30 to 4.2 K. Microwave conductivity from 300 to 10 K and electric-field-dependent conductivity were measured to investigate frequency and voltage dependences. Our results indicate that disorder smears the metal-insulator transition so that the most highly disordered samples are best characterized at low temperatures as semiconductive with a high density of localized states in their gap. A sizable increase in the low-temperature resistance and thermopower with applied magnetic field indicates that the magnetic field reduces the density of localized states at the Fermi energy.

    Original languageEnglish (US)
    Pages (from-to)2958-2963
    Number of pages6
    JournalPhysical Review B
    Volume24
    Issue number6
    DOIs
    StatePublished - 1981

    Fingerprint

    Iodides
    Transport properties
    iodides
    transport properties
    disorders
    Magnetic fields
    smear
    conductivity
    Metal insulator transition
    Thermoelectric power
    Magnetoresistance
    Fermi level
    magnetic fields
    Microwaves
    Electric fields
    insulators
    microwaves
    Temperature
    electrical resistivity
    electric fields

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Transport properties of tetrathiotetracene iodide (TTT2I3-) at low temperatures. / Khanna, S. K.; Fuller, W. W.; Grner, G.; Chaikin, P. M.

    In: Physical Review B, Vol. 24, No. 6, 1981, p. 2958-2963.

    Research output: Contribution to journalArticle

    Khanna, S. K. ; Fuller, W. W. ; Grner, G. ; Chaikin, P. M. / Transport properties of tetrathiotetracene iodide (TTT2I3-) at low temperatures. In: Physical Review B. 1981 ; Vol. 24, No. 6. pp. 2958-2963.
    @article{84f538cf1e5b4e4a8f5eb1f96a79cc0a,
    title = "Transport properties of tetrathiotetracene iodide (TTT2I3-) at low temperatures",
    abstract = "We have performed a series of transport measurements on tetrathiotetracene iodide (TTT2I3-) samples with varying degrees of disorder. These measurements include electrical conductivity from 300 to 0.2 K, magnetoresistance from 30 to 1.5 K, and magnetothermopower from 30 to 4.2 K. Microwave conductivity from 300 to 10 K and electric-field-dependent conductivity were measured to investigate frequency and voltage dependences. Our results indicate that disorder smears the metal-insulator transition so that the most highly disordered samples are best characterized at low temperatures as semiconductive with a high density of localized states in their gap. A sizable increase in the low-temperature resistance and thermopower with applied magnetic field indicates that the magnetic field reduces the density of localized states at the Fermi energy.",
    author = "Khanna, {S. K.} and Fuller, {W. W.} and G. Grner and Chaikin, {P. M.}",
    year = "1981",
    doi = "10.1103/PhysRevB.24.2958",
    language = "English (US)",
    volume = "24",
    pages = "2958--2963",
    journal = "Physical Review B-Condensed Matter",
    issn = "1098-0121",
    publisher = "American Physical Society",
    number = "6",

    }

    TY - JOUR

    T1 - Transport properties of tetrathiotetracene iodide (TTT2I3-) at low temperatures

    AU - Khanna, S. K.

    AU - Fuller, W. W.

    AU - Grner, G.

    AU - Chaikin, P. M.

    PY - 1981

    Y1 - 1981

    N2 - We have performed a series of transport measurements on tetrathiotetracene iodide (TTT2I3-) samples with varying degrees of disorder. These measurements include electrical conductivity from 300 to 0.2 K, magnetoresistance from 30 to 1.5 K, and magnetothermopower from 30 to 4.2 K. Microwave conductivity from 300 to 10 K and electric-field-dependent conductivity were measured to investigate frequency and voltage dependences. Our results indicate that disorder smears the metal-insulator transition so that the most highly disordered samples are best characterized at low temperatures as semiconductive with a high density of localized states in their gap. A sizable increase in the low-temperature resistance and thermopower with applied magnetic field indicates that the magnetic field reduces the density of localized states at the Fermi energy.

    AB - We have performed a series of transport measurements on tetrathiotetracene iodide (TTT2I3-) samples with varying degrees of disorder. These measurements include electrical conductivity from 300 to 0.2 K, magnetoresistance from 30 to 1.5 K, and magnetothermopower from 30 to 4.2 K. Microwave conductivity from 300 to 10 K and electric-field-dependent conductivity were measured to investigate frequency and voltage dependences. Our results indicate that disorder smears the metal-insulator transition so that the most highly disordered samples are best characterized at low temperatures as semiconductive with a high density of localized states in their gap. A sizable increase in the low-temperature resistance and thermopower with applied magnetic field indicates that the magnetic field reduces the density of localized states at the Fermi energy.

    UR - http://www.scopus.com/inward/record.url?scp=0038902858&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0038902858&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.24.2958

    DO - 10.1103/PhysRevB.24.2958

    M3 - Article

    VL - 24

    SP - 2958

    EP - 2963

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 1098-0121

    IS - 6

    ER -