Topological disorder and conductance fluctuations in thin films

Kristin M. Abkemeier, David G. Grier

    Research output: Contribution to journalArticle

    Abstract

    1/f noise in certain amorphous and polycrystalline materials may have an origin in the intrinsic disorder in these systems. Modeling such systems as topologically disordered linear networks reveals how the range and scale of the dynamical current redistribution due to isolated fluctuators depend on the network's degree of disorder. We introduce a "disorder parameter" ξ, which quantifies the degree of topological disorder in simulated resistor networks. The magnitude of conductance fluctuations in the networks caused by removal of single resistors is found to scale with ξ. Such bond breaking events are analogous to the motion of diffusing defects in materials such as hydrogenated amorphous silicon (a-Si:H). These results extended to the scenario of multiple simultaneous bond breaking events suggest how fluctuations on all scales might occur especially in disordered systems.

    Original languageEnglish (US)
    Pages (from-to)2723-2727
    Number of pages5
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume54
    Issue number4
    StatePublished - 1996

    Fingerprint

    Resistors
    disorders
    Linear networks
    Thin films
    Polycrystalline materials
    thin films
    Amorphous silicon
    resistors
    Defects
    amorphous materials
    amorphous silicon
    defects

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Topological disorder and conductance fluctuations in thin films. / Abkemeier, Kristin M.; Grier, David G.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 4, 1996, p. 2723-2727.

    Research output: Contribution to journalArticle

    Abkemeier, Kristin M. ; Grier, David G. / Topological disorder and conductance fluctuations in thin films. In: Physical Review B - Condensed Matter and Materials Physics. 1996 ; Vol. 54, No. 4. pp. 2723-2727.
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