Topological disorder and conductance fluctuations in granular thin films

Kristin M. Abkemeier, David G. Grier

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Topological disorder places constraints on the local flow of currents in granular thin films of metals and semiconductors. These constraints in turn influence measurable transport properties such as conductance and conductance fluctuations for these films. This paper quantifies disorder in the disposition of grains within real and simulated thin films by applying methods originally developed studying foam evolution. For simulated Voronoi resistor networks, the overall conductance of a film with a given grain density achieves a minimum value for an intermediate degree disorder. Films of equal of conductances on either side of this minimum can have strikingly different current distributions. The results of simulations of 1/f noise systems in the context of transport and scanning probe microscopy measurement of a-Si:H thin films are discussed.

    Original languageEnglish (US)
    Title of host publicationMaterials Research Society Symposium - Proceedings
    PublisherMaterials Research Society
    Pages271-274
    Number of pages4
    Volume407
    StatePublished - 1996
    EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
    Duration: Nov 27 1995Nov 30 1995

    Other

    OtherProceedings of the 1995 MRS Fall Symposium
    CityBoston, MA, USA
    Period11/27/9511/30/95

    Fingerprint

    Thin films
    Scanning probe microscopy
    Resistors
    Transport properties
    Foams
    Metals
    Semiconductor materials

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Abkemeier, K. M., & Grier, D. G. (1996). Topological disorder and conductance fluctuations in granular thin films. In Materials Research Society Symposium - Proceedings (Vol. 407, pp. 271-274). Materials Research Society.

    Topological disorder and conductance fluctuations in granular thin films. / Abkemeier, Kristin M.; Grier, David G.

    Materials Research Society Symposium - Proceedings. Vol. 407 Materials Research Society, 1996. p. 271-274.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abkemeier, KM & Grier, DG 1996, Topological disorder and conductance fluctuations in granular thin films. in Materials Research Society Symposium - Proceedings. vol. 407, Materials Research Society, pp. 271-274, Proceedings of the 1995 MRS Fall Symposium, Boston, MA, USA, 11/27/95.
    Abkemeier KM, Grier DG. Topological disorder and conductance fluctuations in granular thin films. In Materials Research Society Symposium - Proceedings. Vol. 407. Materials Research Society. 1996. p. 271-274
    Abkemeier, Kristin M. ; Grier, David G. / Topological disorder and conductance fluctuations in granular thin films. Materials Research Society Symposium - Proceedings. Vol. 407 Materials Research Society, 1996. pp. 271-274
    @inproceedings{2289318cde6f412bb96f1e258d408114,
    title = "Topological disorder and conductance fluctuations in granular thin films",
    abstract = "Topological disorder places constraints on the local flow of currents in granular thin films of metals and semiconductors. These constraints in turn influence measurable transport properties such as conductance and conductance fluctuations for these films. This paper quantifies disorder in the disposition of grains within real and simulated thin films by applying methods originally developed studying foam evolution. For simulated Voronoi resistor networks, the overall conductance of a film with a given grain density achieves a minimum value for an intermediate degree disorder. Films of equal of conductances on either side of this minimum can have strikingly different current distributions. The results of simulations of 1/f noise systems in the context of transport and scanning probe microscopy measurement of a-Si:H thin films are discussed.",
    author = "Abkemeier, {Kristin M.} and Grier, {David G.}",
    year = "1996",
    language = "English (US)",
    volume = "407",
    pages = "271--274",
    booktitle = "Materials Research Society Symposium - Proceedings",
    publisher = "Materials Research Society",

    }

    TY - GEN

    T1 - Topological disorder and conductance fluctuations in granular thin films

    AU - Abkemeier, Kristin M.

    AU - Grier, David G.

    PY - 1996

    Y1 - 1996

    N2 - Topological disorder places constraints on the local flow of currents in granular thin films of metals and semiconductors. These constraints in turn influence measurable transport properties such as conductance and conductance fluctuations for these films. This paper quantifies disorder in the disposition of grains within real and simulated thin films by applying methods originally developed studying foam evolution. For simulated Voronoi resistor networks, the overall conductance of a film with a given grain density achieves a minimum value for an intermediate degree disorder. Films of equal of conductances on either side of this minimum can have strikingly different current distributions. The results of simulations of 1/f noise systems in the context of transport and scanning probe microscopy measurement of a-Si:H thin films are discussed.

    AB - Topological disorder places constraints on the local flow of currents in granular thin films of metals and semiconductors. These constraints in turn influence measurable transport properties such as conductance and conductance fluctuations for these films. This paper quantifies disorder in the disposition of grains within real and simulated thin films by applying methods originally developed studying foam evolution. For simulated Voronoi resistor networks, the overall conductance of a film with a given grain density achieves a minimum value for an intermediate degree disorder. Films of equal of conductances on either side of this minimum can have strikingly different current distributions. The results of simulations of 1/f noise systems in the context of transport and scanning probe microscopy measurement of a-Si:H thin films are discussed.

    UR - http://www.scopus.com/inward/record.url?scp=0029753586&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0029753586&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0029753586

    VL - 407

    SP - 271

    EP - 274

    BT - Materials Research Society Symposium - Proceedings

    PB - Materials Research Society

    ER -