Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, K. M. Varahramyan, Davood Shahrjerdi, S. K. Banerjee, E. Tutuc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices [1]. The realization of high performance nanowire devices however has been stymied primarily by large source (S) and drain (D) contact resistances. Here we report the fabrication and electrical characterization of the top-gated Ge-Si xGe1-x core-shell nanowire field-effect transistors (NWFETs) with highly doped S/D. The highly doped S/D, realized using low energy ion implantation, allows an efficient carrier injection into the NWFET channel.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages15-16
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

Fingerprint

Field effect transistors
Nanowires
Contact resistance
Germanium
Ion implantation
Semiconductor materials
Fabrication
Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nah, J., Liu, E. S., Varahramyan, K. M., Shahrjerdi, D., Banerjee, S. K., & Tutuc, E. (2009). Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain. In 67th Device Research Conference, DRC 2009 (pp. 15-16). [5354970] https://doi.org/10.1109/DRC.2009.5354970

Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain. / Nah, Junghyo; Liu, E. S.; Varahramyan, K. M.; Shahrjerdi, Davood; Banerjee, S. K.; Tutuc, E.

67th Device Research Conference, DRC 2009. 2009. p. 15-16 5354970.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nah, J, Liu, ES, Varahramyan, KM, Shahrjerdi, D, Banerjee, SK & Tutuc, E 2009, Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain. in 67th Device Research Conference, DRC 2009., 5354970, pp. 15-16, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 6/22/09. https://doi.org/10.1109/DRC.2009.5354970
Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain. In 67th Device Research Conference, DRC 2009. 2009. p. 15-16. 5354970 https://doi.org/10.1109/DRC.2009.5354970
Nah, Junghyo ; Liu, E. S. ; Varahramyan, K. M. ; Shahrjerdi, Davood ; Banerjee, S. K. ; Tutuc, E. / Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain. 67th Device Research Conference, DRC 2009. 2009. pp. 15-16
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