Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium

Bahman Hekmatshoar, Shams Mohajerzadeh, Davood Shahrjerdi, Michael D. Robertson

Research output: Contribution to journalArticle

Abstract

Polycrystalline germanium based Thin-film tunnelling transistors were fabricated on flexible plastic substrates using stress-assissted lateral crystallization germanium. It was observed that tunnelling phenomenon occurred through the potential barrier in a channel where the two frontiers of lateral growth initiated from drain. It was also found that the potential barrier of the transistors was controlled by gate bias. The results show that on/off ratio of the transistors is 10 4 and high driving current is 2 mA.

Original languageEnglish (US)
Pages (from-to)1054-1056
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number6
DOIs
StatePublished - Aug 9 2004

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germanium
transistors
plastics
thin films
high current
crystallization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium. / Hekmatshoar, Bahman; Mohajerzadeh, Shams; Shahrjerdi, Davood; Robertson, Michael D.

In: Applied Physics Letters, Vol. 85, No. 6, 09.08.2004, p. 1054-1056.

Research output: Contribution to journalArticle

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