THERMOELECTRIC POWER OF MEM(TCNQ)//2.

R. C. Lacoe, G. Gruner, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    MEM(TCNQ)//2 undergoes a first-order semiconductor to metal transition at 340. 8 K. The thermoelectric power (TEP) of MEM(TCNQ)//2 was measured in the temperature range above 335 K. Above the transition, the TEP is -65 mu v/ degree K; in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

    Original languageEnglish (US)
    Pages (from-to)599-601
    Number of pages3
    JournalSolid State Communications
    Volume36
    Issue number7
    DOIs
    StatePublished - Nov 1980

    Fingerprint

    Mars Excursion Module
    Thermoelectric power
    Temperature
    Transition metals
    Entropy
    transition metals
    entropy
    Semiconductor materials
    temperature
    tetracyanoquinodimethane

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    THERMOELECTRIC POWER OF MEM(TCNQ)//2. / Lacoe, R. C.; Gruner, G.; Chaikin, P. M.

    In: Solid State Communications, Vol. 36, No. 7, 11.1980, p. 599-601.

    Research output: Contribution to journalArticle

    Lacoe, RC, Gruner, G & Chaikin, PM 1980, 'THERMOELECTRIC POWER OF MEM(TCNQ)//2.', Solid State Communications, vol. 36, no. 7, pp. 599-601. https://doi.org/10.1016/0038-1098(80)90095-2
    Lacoe, R. C. ; Gruner, G. ; Chaikin, P. M. / THERMOELECTRIC POWER OF MEM(TCNQ)//2. In: Solid State Communications. 1980 ; Vol. 36, No. 7. pp. 599-601.
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