Theoretical model for the dynamics of hydrogen recombination on the Si(100)-(2×1) surface

Jia Sheng, John Zhang

Research output: Contribution to journalArticle

Abstract

We propose in this paper a quantitative theoretical model to describe the recombination dynamics of hydrogen on Si(100)-(2×1) surface. The desorption kinetics of hydrogen on Si(100) has been experimentally determined to obey a first-order rate law and the internal state distributions of desorbed hydrogen has recently been determined experimentally using the resonantly enhanced multiphoton ionization technique. In this theoretical model, which has the characteristic of preassociative desorption, the rate of desorption and the internal state distribution Of H2 is given by a thermally averaged golden-rule expression. In particular, the desorption Of H2 is supposed to result from a bound-free transition between an initially bound state composed of two H-Si dangling bonds on the same silicon dimer and a final continuum state consisting Of H2 plus Si surface. In addition to explaining the first-order desorption kinetics, our model dictates that H 2 will be vibrationally hot upon desorption, whereas rotation Of H2 will generally be expected to be cold because of symmetry constraints. These conclusions about the dynamics are consistent with recent experiments [K. W. Kolasinski, S. F. Shane, R. N. Zare, J. Chem. Phys. 95, 5482 ( 1991 ); 96, 3995 ( 1992) ] in which hydrogen is found to be vibrationally excited but rotationally cold. We show, in this paper, that essentially all recent experimental results on hydrogen desorption on Si(100) can be qualitatively explained based on the Franck-Condon factors in our model. A co-planar model calculation is carried out using our method, and the calculated rovibrational distribution of H2 is compared with the aforementioned experimental results of Kolasinski, Shane, and Zare.

Original languageEnglish (US)
Pages (from-to)596-604
Number of pages9
JournalThe Journal of chemical physics
Volume97
Issue number1
StatePublished - 1992

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hydrogen recombinations
Hydrogen
Desorption
desorption
hydrogen
Kinetics
Dangling bonds
kinetics
Silicon
Dimers
Ionization
dimers
continuums
ionization
symmetry
silicon

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Theoretical model for the dynamics of hydrogen recombination on the Si(100)-(2×1) surface. / Sheng, Jia; Zhang, John.

In: The Journal of chemical physics, Vol. 97, No. 1, 1992, p. 596-604.

Research output: Contribution to journalArticle

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