The wetting transition in a random surface model

D. B. Abraham, Charles Newman

Research output: Contribution to journalArticle

Abstract

We continue our analysis of the phase diagram of a discrete random surface, with no "downward fingers," lying above a flat two-dimensional substrate. The surface is closely related to the 2D Ising model and its free energy is exactly solvable in much (but not all) of the phase diagram. There is a transition at temperature Tw from a high-T infinite height or wet phase to a low-T finite height or partially wet phase. Previously it was shown that when a parameter b, related to the contact interaction, is positive, Tw is independent of b and there is a logarithmic specific heat divergence as Tw is approached from either side. Here we show that for b<0, Tw does depend on b and there is no thermodynamic singularity from the wet phase. The partially wet phases for b≤0 and b>0 differ in the absence or presence of a monolayer covering the entire substrate; this results in a first-order transition across the line b=0, T<Tw.

Original languageEnglish (US)
Pages (from-to)1097-1111
Number of pages15
JournalJournal of Statistical Physics
Volume63
Issue number5-6
DOIs
StatePublished - Jun 1991

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Wetting Transition
Random Surfaces
Phase Diagram
wetting
Substrate
phase diagrams
Specific Heat
Ising model
Ising Model
Free Energy
electric contacts
Divergence
divergence
Logarithmic
coverings
Covering
Continue
free energy
specific heat
Entire

Keywords

  • Ising model
  • monolayer
  • random surface
  • Wetting

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Physics and Astronomy(all)
  • Mathematical Physics

Cite this

The wetting transition in a random surface model. / Abraham, D. B.; Newman, Charles.

In: Journal of Statistical Physics, Vol. 63, No. 5-6, 06.1991, p. 1097-1111.

Research output: Contribution to journalArticle

Abraham, D. B. ; Newman, Charles. / The wetting transition in a random surface model. In: Journal of Statistical Physics. 1991 ; Vol. 63, No. 5-6. pp. 1097-1111.
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