The thermoelectric power of MEM(TCNQ)2

R. C. Lacoe, G. Grüner, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    MEM(TCNQ)2 undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)2 in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

    Original languageEnglish (US)
    Pages (from-to)599-601
    Number of pages3
    JournalSolid State Communications
    Volume36
    Issue number7
    DOIs
    StatePublished - Jan 1 1980

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    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Lacoe, R. C., Grüner, G., & Chaikin, P. M. (1980). The thermoelectric power of MEM(TCNQ)2. Solid State Communications, 36(7), 599-601. https://doi.org/10.1016/0038-1098(80)90095-2