Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Jian Chen, Karlheinz Bock, Herman E. Maes

Research output: Contribution to conferencePaper

Abstract

In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

Original languageEnglish (US)
Pages69-76
Number of pages8
StatePublished - Dec 1 1999
EventProceedings of the 25th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States
Duration: Nov 14 1999Nov 18 1999

Other

OtherProceedings of the 25th International Symposium for Testing and Failure Analysis
CountryUnited States
CitySanta Clara, CA
Period11/14/9911/18/99

Fingerprint

Temperature measurement
Raman spectroscopy
Microscopic examination
Photons
Light emission
Impact ionization
Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Rasras, M., De Wolf, I., Groeseneken, G., Chen, J., Bock, K., & Maes, H. E. (1999). Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. 69-76. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.

Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. / Rasras, Mahmoud; De Wolf, Ingrid; Groeseneken, Guido; Chen, Jian; Bock, Karlheinz; Maes, Herman E.

1999. 69-76 Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.

Research output: Contribution to conferencePaper

Rasras, M, De Wolf, I, Groeseneken, G, Chen, J, Bock, K & Maes, HE 1999, 'Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy', Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States, 11/14/99 - 11/18/99 pp. 69-76.
Rasras M, De Wolf I, Groeseneken G, Chen J, Bock K, Maes HE. Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. 1999. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.
Rasras, Mahmoud ; De Wolf, Ingrid ; Groeseneken, Guido ; Chen, Jian ; Bock, Karlheinz ; Maes, Herman E. / Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.8 p.
@conference{f84f813028b64f5598ea2d61f18c639b,
title = "Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy",
abstract = "In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.",
author = "Mahmoud Rasras and {De Wolf}, Ingrid and Guido Groeseneken and Jian Chen and Karlheinz Bock and Maes, {Herman E.}",
year = "1999",
month = "12",
day = "1",
language = "English (US)",
pages = "69--76",
note = "Proceedings of the 25th International Symposium for Testing and Failure Analysis ; Conference date: 14-11-1999 Through 18-11-1999",

}

TY - CONF

T1 - Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

AU - Rasras, Mahmoud

AU - De Wolf, Ingrid

AU - Groeseneken, Guido

AU - Chen, Jian

AU - Bock, Karlheinz

AU - Maes, Herman E.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

AB - In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

UR - http://www.scopus.com/inward/record.url?scp=1542360758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542360758&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542360758

SP - 69

EP - 76

ER -