Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Jian Chen, Karlheinz Bock, Herman E. Maes

    Research output: Contribution to conferencePaper

    Abstract

    In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

    Original languageEnglish (US)
    Pages69-76
    Number of pages8
    StatePublished - Dec 1 1999
    EventProceedings of the 25th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States
    Duration: Nov 14 1999Nov 18 1999

    Other

    OtherProceedings of the 25th International Symposium for Testing and Failure Analysis
    CountryUnited States
    CitySanta Clara, CA
    Period11/14/9911/18/99

    Fingerprint

    Temperature measurement
    Raman spectroscopy
    Microscopic examination
    Photons
    Light emission
    Impact ionization
    Temperature

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Safety, Risk, Reliability and Quality
    • Electrical and Electronic Engineering

    Cite this

    Rasras, M., De Wolf, I., Groeseneken, G., Chen, J., Bock, K., & Maes, H. E. (1999). Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. 69-76. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.

    Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. / Rasras, Mahmoud; De Wolf, Ingrid; Groeseneken, Guido; Chen, Jian; Bock, Karlheinz; Maes, Herman E.

    1999. 69-76 Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.

    Research output: Contribution to conferencePaper

    Rasras, M, De Wolf, I, Groeseneken, G, Chen, J, Bock, K & Maes, HE 1999, 'Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy' Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States, 11/14/99 - 11/18/99, pp. 69-76.
    Rasras M, De Wolf I, Groeseneken G, Chen J, Bock K, Maes HE. Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. 1999. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.
    Rasras, Mahmoud ; De Wolf, Ingrid ; Groeseneken, Guido ; Chen, Jian ; Bock, Karlheinz ; Maes, Herman E. / Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy. Paper presented at Proceedings of the 25th International Symposium for Testing and Failure Analysis, Santa Clara, CA, United States.8 p.
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    AU - Groeseneken, Guido

    AU - Chen, Jian

    AU - Bock, Karlheinz

    AU - Maes, Herman E.

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