Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

D. B. Gopman, D. Bedau, G. Wolf, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

    Original languageEnglish (US)
    Article number100401
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume88
    Issue number10
    DOIs
    Publication statusPublished - Sep 3 2013

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    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

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