Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

D. B. Gopman, D. Bedau, G. Wolf, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

    Original languageEnglish (US)
    Article number100401
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume88
    Issue number10
    DOIs
    StatePublished - Sep 3 2013

    Fingerprint

    Anisotropy
    temperature dependence
    anisotropy
    Temperature
    temperature
    Hysteresis
    Magnetization
    Chemical activation
    hysteresis
    Statistics
    statistics
    activation
    magnetization
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars. / Gopman, D. B.; Bedau, D.; Wolf, G.; Mangin, S.; Fullerton, E. E.; Katine, J. A.; Kent, A. D.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 10, 100401, 03.09.2013.

    Research output: Contribution to journalArticle

    Gopman, D. B. ; Bedau, D. ; Wolf, G. ; Mangin, S. ; Fullerton, E. E. ; Katine, J. A. ; Kent, A. D. / Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 88, No. 10.
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    AU - Gopman, D. B.

    AU - Bedau, D.

    AU - Wolf, G.

    AU - Mangin, S.

    AU - Fullerton, E. E.

    AU - Katine, J. A.

    AU - Kent, A. D.

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    AB - We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

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