Temperature dependence of precursor-surface interactions in plasma deposition of silicon thin films

Tamas Bakos, Mayur Valipa, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

Using first-principles density functional theory calculations of chemical reactions between the dominant precursor (the SiH3 radical) for plasma deposition of hydrogenated amorphous silicon (a-Si:H) thin films and different hydrogen-terminated crystalline silicon surfaces, we show that SiH3 insertion into strained Si-Si bonds is barrierless. This reaction, together with barrierless hydrogen abstraction and chemisorption reactions, account for the temperature-independent reaction probability of the SiH3 radical with a-Si:H surfaces. In addition, molecular-dynamics simulations of a-Si:H thin-film growth confirm that the same reactions take place on the amorphous surface and the probability for Si incorporation into the a-Si:H film is independent of temperature.

Original languageEnglish (US)
Pages (from-to)61-65
Number of pages5
JournalChemical Physics Letters
Volume414
Issue number1-3
DOIs
StatePublished - Oct 3 2005

Fingerprint

Plasma deposition
Beam plasma interactions
Silicon
surface reactions
Thin films
temperature dependence
Hydrogen
silicon
thin films
Film growth
Chemisorption
Amorphous silicon
Temperature
Density functional theory
Molecular dynamics
Chemical reactions
hydrogen
chemisorption
Crystalline materials
amorphous silicon

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Temperature dependence of precursor-surface interactions in plasma deposition of silicon thin films. / Bakos, Tamas; Valipa, Mayur; Aydil, Eray; Maroudas, Dimitrios.

In: Chemical Physics Letters, Vol. 414, No. 1-3, 03.10.2005, p. 61-65.

Research output: Contribution to journalArticle

Bakos, Tamas ; Valipa, Mayur ; Aydil, Eray ; Maroudas, Dimitrios. / Temperature dependence of precursor-surface interactions in plasma deposition of silicon thin films. In: Chemical Physics Letters. 2005 ; Vol. 414, No. 1-3. pp. 61-65.
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