Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars

D. B. Gopman, D. Bedau, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    We present switching field distributions of spin-transfer-assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm×300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current-dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally induced switching model breaks down for currents exceeding the critical threshold.

    Original languageEnglish (US)
    Article number134427
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume89
    Issue number13
    DOIs
    StatePublished - Apr 28 2014

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    torque
    Torque
    Magnetization reversal
    thresholds
    Critical currents
    ellipses
    critical current
    Multilayers
    breakdown
    direct current
    magnetization
    cross sections
    room temperature
    Temperature

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars. / Gopman, D. B.; Bedau, D.; Mangin, S.; Fullerton, E. E.; Katine, J. A.; Kent, A. D.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 13, 134427, 28.04.2014.

    Research output: Contribution to journalArticle

    Gopman, D. B. ; Bedau, D. ; Mangin, S. ; Fullerton, E. E. ; Katine, J. A. ; Kent, A. D. / Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 89, No. 13.
    @article{b91da714ca364f7c9257d85fed382176,
    title = "Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars",
    abstract = "We present switching field distributions of spin-transfer-assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm×300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current-dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally induced switching model breaks down for currents exceeding the critical threshold.",
    author = "Gopman, {D. B.} and D. Bedau and S. Mangin and Fullerton, {E. E.} and Katine, {J. A.} and Kent, {A. D.}",
    year = "2014",
    month = "4",
    day = "28",
    doi = "10.1103/PhysRevB.89.134427",
    language = "English (US)",
    volume = "89",
    journal = "Physical Review B-Condensed Matter",
    issn = "1098-0121",
    publisher = "American Physical Society",
    number = "13",

    }

    TY - JOUR

    T1 - Switching field distributions with spin transfer torques in perpendicularly magnetized spin-valve nanopillars

    AU - Gopman, D. B.

    AU - Bedau, D.

    AU - Mangin, S.

    AU - Fullerton, E. E.

    AU - Katine, J. A.

    AU - Kent, A. D.

    PY - 2014/4/28

    Y1 - 2014/4/28

    N2 - We present switching field distributions of spin-transfer-assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm×300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current-dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally induced switching model breaks down for currents exceeding the critical threshold.

    AB - We present switching field distributions of spin-transfer-assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm×300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current-dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally induced switching model breaks down for currents exceeding the critical threshold.

    UR - http://www.scopus.com/inward/record.url?scp=84899743119&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84899743119&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.89.134427

    DO - 10.1103/PhysRevB.89.134427

    M3 - Article

    VL - 89

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 1098-0121

    IS - 13

    M1 - 134427

    ER -