Surface smoothening mechanism of amorphous silicon thin films

Mayur S. Valipa, Tamas Bakos, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

An important concern in the deposition of thin hydrogenated amorphous silicon (a-Si H) films is to obtain smooth surfaces. Herein, we combine molecular-dynamics simulations with first-principles density functional theory calculations to elucidate the smoothening mechanism of plasma deposited a-Si H thin films. We show that the deposition precursor may diffuse rapidly on the a-Si H film surface via overcoordinated surface Si atoms and incorporate into the film preferentially in surface valleys, with activation barriers for incorporation dependent on the local surface morphology. Experimental data on smoothening and precursor diffusion are accounted for.

Original languageEnglish (US)
Article number216102
JournalPhysical Review Letters
Volume95
Issue number21
DOIs
StatePublished - Nov 18 2005

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amorphous silicon
thin films
valleys
activation
molecular dynamics
density functional theory
atoms
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Surface smoothening mechanism of amorphous silicon thin films. / Valipa, Mayur S.; Bakos, Tamas; Aydil, Eray; Maroudas, Dimitrios.

In: Physical Review Letters, Vol. 95, No. 21, 216102, 18.11.2005.

Research output: Contribution to journalArticle

Valipa, Mayur S. ; Bakos, Tamas ; Aydil, Eray ; Maroudas, Dimitrios. / Surface smoothening mechanism of amorphous silicon thin films. In: Physical Review Letters. 2005 ; Vol. 95, No. 21.
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