Surface processes during growth of hydrogenated amorphous silicon

Eray Aydil, Sumit Agarwal, Mayur Valipa, Saravanapriyan Sriraman, Dimitrios Maroudas

Research output: Contribution to journalConference article

Abstract

Hydrogenated amorphous silicon films for photovoltaics and thin film transistors are deposited from silane containing discharges. The radicals generated in the plasma such as SiH3 and H impinge on the surface and lead to silicon film growth through a complex network of elementary surface processes that include adsorption, abstraction, insertion and diffusion of various radicals. Mechanism and kinetics of these reactions determine the film composition and quality. Developing deposition strategies for improving the film quality requires a fundamental understanding of the radical-surface interaction mechanisms. We have been using in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry in conjunction with atomistic simulations to determine the elementary surface reaction and diffusion mechanisms. Synergistic use of experiments and atomistic simulations elucidate elementary processes occurring on the surface. Herein, we review our current understanding of the reaction mechanisms that lead to a-Si:H film growth with special emphasis on the reactions of the SiH3 radical.

Original languageEnglish (US)
Pages (from-to)199-207
Number of pages9
JournalMaterials Research Society Symposium Proceedings
Volume808
StatePublished - Dec 1 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Fingerprint

Amorphous silicon
amorphous silicon
Film growth
silicon films
surface reactions
Silanes
Spectroscopic ellipsometry
Surface diffusion
Complex networks
Surface reactions
Silicon
Thin film transistors
surface diffusion
silanes
ellipsometry
Fourier transform infrared spectroscopy
insertion
transistors
simulation
infrared spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Aydil, E., Agarwal, S., Valipa, M., Sriraman, S., & Maroudas, D. (2004). Surface processes during growth of hydrogenated amorphous silicon. Materials Research Society Symposium Proceedings, 808, 199-207.

Surface processes during growth of hydrogenated amorphous silicon. / Aydil, Eray; Agarwal, Sumit; Valipa, Mayur; Sriraman, Saravanapriyan; Maroudas, Dimitrios.

In: Materials Research Society Symposium Proceedings, Vol. 808, 01.12.2004, p. 199-207.

Research output: Contribution to journalConference article

Aydil, E, Agarwal, S, Valipa, M, Sriraman, S & Maroudas, D 2004, 'Surface processes during growth of hydrogenated amorphous silicon', Materials Research Society Symposium Proceedings, vol. 808, pp. 199-207.
Aydil, Eray ; Agarwal, Sumit ; Valipa, Mayur ; Sriraman, Saravanapriyan ; Maroudas, Dimitrios. / Surface processes during growth of hydrogenated amorphous silicon. In: Materials Research Society Symposium Proceedings. 2004 ; Vol. 808. pp. 199-207.
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