Surface hydride composition of plasma deposited hydrogenated amorphous silicon

In situ infrared study of ion flux and temperature dependence

D. C. Marra, W. M.M. Kessels, M. C.M. Van de Sanden, K. Kashefizadeh, Eray Aydil

Research output: Contribution to journalArticle

Abstract

The surface silicon hydride composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) films has been investigated through surface sensitive in situ attenuated total reflection infrared spectroscopy. The fraction of SiHx (x = 1,2,3) on the surface is reported for films deposited at substrate temperatures in the range 40-370 °C and a series decomposition reaction set in which higher hydrides decompose into lower hydrides (SiH3→SiH2→SiH) for increasing substrate temperature is proposed. Surface dangling bonds promote the decomposition reactions on a-Si:H as concluded from experiments in which the incident ion flux during deposition is enhanced. A comparison is made with results reported for hydrogenated crystalline silicon surfaces and the hydrogen coverage of the a-Si:H surface is discussed.

Original languageEnglish (US)
Pages (from-to)1-16
Number of pages16
JournalSurface Science
Volume530
Issue number1-2
DOIs
StatePublished - Apr 20 2003

Fingerprint

Amorphous silicon
Hydrides
hydrides
amorphous silicon
Ions
Fluxes
Infrared radiation
Plasmas
temperature dependence
Chemical analysis
ions
Temperature
Decomposition
decomposition
Hydrogen
Dangling bonds
silicon
Silicon
Substrates
Silanes

Keywords

  • Amorphous surfaces
  • Growth
  • Infrared absorption spectroscopy
  • Ion bombardment
  • Plasma processing
  • Silicon
  • Surface chemical reaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Surface hydride composition of plasma deposited hydrogenated amorphous silicon : In situ infrared study of ion flux and temperature dependence. / Marra, D. C.; Kessels, W. M.M.; Van de Sanden, M. C.M.; Kashefizadeh, K.; Aydil, Eray.

In: Surface Science, Vol. 530, No. 1-2, 20.04.2003, p. 1-16.

Research output: Contribution to journalArticle

Marra, D. C. ; Kessels, W. M.M. ; Van de Sanden, M. C.M. ; Kashefizadeh, K. ; Aydil, Eray. / Surface hydride composition of plasma deposited hydrogenated amorphous silicon : In situ infrared study of ion flux and temperature dependence. In: Surface Science. 2003 ; Vol. 530, No. 1-2. pp. 1-16.
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