Substrate hole current origin after oxide breakdown

M. Rasras, I. De Wolf, G. Groeseneken, R. Degraeve, H. E. Maes

Research output: Contribution to journalConference article

Abstract

Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.

Original languageEnglish (US)
Pages (from-to)537-540
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: Dec 10 2000Dec 13 2000

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Rasras, M., De Wolf, I., Groeseneken, G., Degraeve, R., & Maes, H. E. (2000). Substrate hole current origin after oxide breakdown. Technical Digest - International Electron Devices Meeting, 537-540.