Substrate hole current origin after oxide breakdown

Mahmoud Rasras, I. De Wolf, G. Groeseneken, R. Degraeve, H. E. Maes

    Research output: Contribution to journalConference article

    Abstract

    Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.

    Original languageEnglish (US)
    Pages (from-to)537-540
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    StatePublished - Dec 1 2000
    Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
    Duration: Dec 10 2000Dec 13 2000

    Fingerprint

    Oxides
    breakdown
    oxides
    Substrates
    Impact ionization
    Light emission
    Spectrum analysis
    spectrum analysis
    light emission
    Microscopic examination
    Photons
    microscopy
    ionization
    Electrons
    photons
    electrons

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Rasras, M., De Wolf, I., Groeseneken, G., Degraeve, R., & Maes, H. E. (2000). Substrate hole current origin after oxide breakdown. Technical Digest - International Electron Devices Meeting, 537-540.

    Substrate hole current origin after oxide breakdown. / Rasras, Mahmoud; De Wolf, I.; Groeseneken, G.; Degraeve, R.; Maes, H. E.

    In: Technical Digest - International Electron Devices Meeting, 01.12.2000, p. 537-540.

    Research output: Contribution to journalConference article

    Rasras, M, De Wolf, I, Groeseneken, G, Degraeve, R & Maes, HE 2000, 'Substrate hole current origin after oxide breakdown', Technical Digest - International Electron Devices Meeting, pp. 537-540.
    Rasras M, De Wolf I, Groeseneken G, Degraeve R, Maes HE. Substrate hole current origin after oxide breakdown. Technical Digest - International Electron Devices Meeting. 2000 Dec 1;537-540.
    Rasras, Mahmoud ; De Wolf, I. ; Groeseneken, G. ; Degraeve, R. ; Maes, H. E. / Substrate hole current origin after oxide breakdown. In: Technical Digest - International Electron Devices Meeting. 2000 ; pp. 537-540.
    @article{af518f02452247cdbe6683e8fb17dd6a,
    title = "Substrate hole current origin after oxide breakdown",
    abstract = "Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.",
    author = "Mahmoud Rasras and {De Wolf}, I. and G. Groeseneken and R. Degraeve and Maes, {H. E.}",
    year = "2000",
    month = "12",
    day = "1",
    language = "English (US)",
    pages = "537--540",
    journal = "Technical Digest - International Electron Devices Meeting",
    issn = "0163-1918",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",

    }

    TY - JOUR

    T1 - Substrate hole current origin after oxide breakdown

    AU - Rasras, Mahmoud

    AU - De Wolf, I.

    AU - Groeseneken, G.

    AU - Degraeve, R.

    AU - Maes, H. E.

    PY - 2000/12/1

    Y1 - 2000/12/1

    N2 - Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.

    AB - Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.

    UR - http://www.scopus.com/inward/record.url?scp=0034453898&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0034453898&partnerID=8YFLogxK

    M3 - Conference article

    SP - 537

    EP - 540

    JO - Technical Digest - International Electron Devices Meeting

    JF - Technical Digest - International Electron Devices Meeting

    SN - 0163-1918

    ER -