Submonolayer growth in the presence of defect sites

R. Vardavas, C. Ratsch, R. E. Caflisch

Research output: Contribution to journalArticle

Abstract

Submonolayer epitaxy in the presence of defect sites on the substrate is studied by means of a level-set method. Here, island nucleations occur by the creation of dimers and defect-monomer pairs. We present results for the scaled island size distribution (ISD) for growth with different densities for both random and regularly positioned defects. The dynamics show that for large D/F and defect density, all islands are nucleated at the defect sites in the very early stages of growth. We use scaling ideas to show that a gamma distribution can suitably describe the ISD.

Original languageEnglish (US)
Pages (from-to)185-192
Number of pages8
JournalSurface Science
Volume569
Issue number1-3
DOIs
StatePublished - Oct 1 2004

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Keywords

  • Epitaxy
  • Growth
  • Surface defects

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Vardavas, R., Ratsch, C., & Caflisch, R. E. (2004). Submonolayer growth in the presence of defect sites. Surface Science, 569(1-3), 185-192. https://doi.org/10.1016/j.susc.2004.07.041