Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, B. S. Cheng, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, Kok-Ming Leung

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

    Original languageEnglish (US)
    Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
    Pages219-224
    Number of pages6
    Volume11
    Edition5
    DOIs
    StatePublished - 2007
    Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
    Duration: Oct 7 2007Oct 12 2007

    Other

    Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
    CountryUnited States
    CityWashington, DC
    Period10/7/0710/12/07

    Fingerprint

    Light emitting diodes
    Thin films
    Quantum efficiency
    Cones

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Chiu, C. H., Kuo, H. C., Lee, C. E., Lin, C. H., Cheng, B. S., Cheng, P. C., ... Leung, K-M. (2007). Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., Vol. 11, pp. 219-224) https://doi.org/10.1149/1.2783875

    Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. / Chiu, C. H.; Kuo, H. C.; Lee, C. E.; Lin, C. H.; Cheng, B. S.; Cheng, P. C.; Huang, H. W.; Lu, T. C.; Wang, S. C.; Leung, Kok-Ming.

    ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. Vol. 11 5. ed. 2007. p. 219-224.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Chiu, CH, Kuo, HC, Lee, CE, Lin, CH, Cheng, BS, Cheng, PC, Huang, HW, Lu, TC, Wang, SC & Leung, K-M 2007, Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. in ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 edn, vol. 11, pp. 219-224, 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2783875
    Chiu CH, Kuo HC, Lee CE, Lin CH, Cheng BS, Cheng PC et al. Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 ed. Vol. 11. 2007. p. 219-224 https://doi.org/10.1149/1.2783875
    Chiu, C. H. ; Kuo, H. C. ; Lee, C. E. ; Lin, C. H. ; Cheng, B. S. ; Cheng, P. C. ; Huang, H. W. ; Lu, T. C. ; Wang, S. C. ; Leung, Kok-Ming. / Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. Vol. 11 5. ed. 2007. pp. 219-224
    @inproceedings{32a6b8cf1bf744a39a8c010bfcd9ece4,
    title = "Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces",
    abstract = "A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7{\%}; increasing by 18{\%} and 16{\%}, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.",
    author = "Chiu, {C. H.} and Kuo, {H. C.} and Lee, {C. E.} and Lin, {C. H.} and Cheng, {B. S.} and Cheng, {P. C.} and Huang, {H. W.} and Lu, {T. C.} and Wang, {S. C.} and Kok-Ming Leung",
    year = "2007",
    doi = "10.1149/1.2783875",
    language = "English (US)",
    isbn = "9781566775717",
    volume = "11",
    pages = "219--224",
    booktitle = "ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices",
    edition = "5",

    }

    TY - GEN

    T1 - Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

    AU - Chiu, C. H.

    AU - Kuo, H. C.

    AU - Lee, C. E.

    AU - Lin, C. H.

    AU - Cheng, B. S.

    AU - Cheng, P. C.

    AU - Huang, H. W.

    AU - Lu, T. C.

    AU - Wang, S. C.

    AU - Leung, Kok-Ming

    PY - 2007

    Y1 - 2007

    N2 - A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

    AB - A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

    UR - http://www.scopus.com/inward/record.url?scp=45749113727&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=45749113727&partnerID=8YFLogxK

    U2 - 10.1149/1.2783875

    DO - 10.1149/1.2783875

    M3 - Conference contribution

    AN - SCOPUS:45749113727

    SN - 9781566775717

    VL - 11

    SP - 219

    EP - 224

    BT - ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices

    ER -