Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition

Seongho Jeong, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.

Original languageEnglish (US)
Pages (from-to)1338-1343
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number6
DOIs
StatePublished - Nov 1 2010

Fingerprint

Organic Chemicals
Organic chemicals
metalorganic chemical vapor deposition
Structural properties
Chemical vapor deposition
Electric properties
Metals
electrical properties
Thin films
Film thickness
film thickness
thin films
grain size
Hole mobility
Carrier transport
Carrier mobility
Steam
hole mobility
Substrates
carrier mobility

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{1e2bfef4e2e744e3a276629800ef1d76,
title = "Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition",
abstract = "Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.",
author = "Seongho Jeong and Eray Aydil",
year = "2010",
month = "11",
day = "1",
doi = "10.1116/1.3491036",
language = "English (US)",
volume = "28",
pages = "1338--1343",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition

AU - Jeong, Seongho

AU - Aydil, Eray

PY - 2010/11/1

Y1 - 2010/11/1

N2 - Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.

AB - Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.

UR - http://www.scopus.com/inward/record.url?scp=78149438155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149438155&partnerID=8YFLogxK

U2 - 10.1116/1.3491036

DO - 10.1116/1.3491036

M3 - Article

AN - SCOPUS:78149438155

VL - 28

SP - 1338

EP - 1343

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

ER -