STM Control of Noninteger Residual Charge Q0 on the Central Electrode of a Double-Tunnel Junction

Zhao Yan Rong, Alejandro Chang, Lesley F. Cohen, E. L. Wolf

Research output: Contribution to journalArticle

Abstract

In a voltage-biased mesoscopic double-tunnel junction, the Coulomb threshold Vc is an e-periodic function of Q0, the charge on the inner electrode. In our STM work, a large Au tip images 100 A Ag particles deposited on a cleaved BSCCO crystal substrate. Stable double junctions between the tip, the imaged particle, and the substrate are identified by Coulomb staircase I(V)‘s. The control of Q0 is demonstrated by the variation of tip-particle spacing. The parameterization of such results permits a discussion of Q0 variation mechanisms.

Original languageEnglish (US)
Pages (from-to)67-70
Number of pages4
JournalIEEE Transactions on Magnetics
Volume28
Issue number1
DOIs
StatePublished - 1992

Fingerprint

Tunnel junctions
tunnel junctions
Electrodes
electrodes
Substrates
Parameterization
periodic functions
stairways
parameterization
Crystals
Electric potential
spacing
thresholds
electric potential
crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

STM Control of Noninteger Residual Charge Q0 on the Central Electrode of a Double-Tunnel Junction. / Rong, Zhao Yan; Chang, Alejandro; Cohen, Lesley F.; Wolf, E. L.

In: IEEE Transactions on Magnetics, Vol. 28, No. 1, 1992, p. 67-70.

Research output: Contribution to journalArticle

Rong, Zhao Yan ; Chang, Alejandro ; Cohen, Lesley F. ; Wolf, E. L. / STM Control of Noninteger Residual Charge Q0 on the Central Electrode of a Double-Tunnel Junction. In: IEEE Transactions on Magnetics. 1992 ; Vol. 28, No. 1. pp. 67-70.
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