Spintronics: Perpendicular all the way

Andrew D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Magnetic tunnel junctions (MTJ) are thin-film structures consisting of two conducting magnetic layers separated by a very thin insulating barrier. A commonly adopted material for MTJs is the CoFeB-MgO multilayer system, which produces a giant TMR ratio with in-plane magnetization. The focus of the efforts has been on complex multilayers of magnetic transition elements such as Co and Ni, or Co and Fe with heavier nonmagnetic elements like Pt and Pd. The surprising discovery that CoFeB also shows large PMA opens a new path to the realization of high-performance, perpendicularly magnetized STT-MRAM. The work goes further to demonstrate the incorporation of this interface anisotropy in a device. The work by Ohno and colleagues opens new possibilities for high-performance STT-MRAM, and also poses basic questions.

    Original languageEnglish (US)
    Pages (from-to)699-700
    Number of pages2
    JournalNature Materials
    Volume9
    Issue number9
    DOIs
    StatePublished - Sep 2010

    Fingerprint

    Magnetoelectronics
    Multilayers
    Transition Elements
    Tunnel junctions
    heavy elements
    tunnel junctions
    Magnetization
    Anisotropy
    transition metals
    conduction
    Thin films
    magnetization
    anisotropy
    thin films

    ASJC Scopus subject areas

    • Mechanical Engineering
    • Mechanics of Materials
    • Condensed Matter Physics
    • Materials Science(all)
    • Chemistry(all)

    Cite this

    Spintronics : Perpendicular all the way. / Kent, Andrew D.

    In: Nature Materials, Vol. 9, No. 9, 09.2010, p. 699-700.

    Research output: Contribution to journalArticle

    Kent, Andrew D. / Spintronics : Perpendicular all the way. In: Nature Materials. 2010 ; Vol. 9, No. 9. pp. 699-700.
    @article{04d140faab4e467eada0902a660dc585,
    title = "Spintronics: Perpendicular all the way",
    abstract = "Magnetic tunnel junctions (MTJ) are thin-film structures consisting of two conducting magnetic layers separated by a very thin insulating barrier. A commonly adopted material for MTJs is the CoFeB-MgO multilayer system, which produces a giant TMR ratio with in-plane magnetization. The focus of the efforts has been on complex multilayers of magnetic transition elements such as Co and Ni, or Co and Fe with heavier nonmagnetic elements like Pt and Pd. The surprising discovery that CoFeB also shows large PMA opens a new path to the realization of high-performance, perpendicularly magnetized STT-MRAM. The work goes further to demonstrate the incorporation of this interface anisotropy in a device. The work by Ohno and colleagues opens new possibilities for high-performance STT-MRAM, and also poses basic questions.",
    author = "Kent, {Andrew D.}",
    year = "2010",
    month = "9",
    doi = "10.1038/nmat2844",
    language = "English (US)",
    volume = "9",
    pages = "699--700",
    journal = "Nature Materials",
    issn = "1476-1122",
    publisher = "Nature Publishing Group",
    number = "9",

    }

    TY - JOUR

    T1 - Spintronics

    T2 - Perpendicular all the way

    AU - Kent, Andrew D.

    PY - 2010/9

    Y1 - 2010/9

    N2 - Magnetic tunnel junctions (MTJ) are thin-film structures consisting of two conducting magnetic layers separated by a very thin insulating barrier. A commonly adopted material for MTJs is the CoFeB-MgO multilayer system, which produces a giant TMR ratio with in-plane magnetization. The focus of the efforts has been on complex multilayers of magnetic transition elements such as Co and Ni, or Co and Fe with heavier nonmagnetic elements like Pt and Pd. The surprising discovery that CoFeB also shows large PMA opens a new path to the realization of high-performance, perpendicularly magnetized STT-MRAM. The work goes further to demonstrate the incorporation of this interface anisotropy in a device. The work by Ohno and colleagues opens new possibilities for high-performance STT-MRAM, and also poses basic questions.

    AB - Magnetic tunnel junctions (MTJ) are thin-film structures consisting of two conducting magnetic layers separated by a very thin insulating barrier. A commonly adopted material for MTJs is the CoFeB-MgO multilayer system, which produces a giant TMR ratio with in-plane magnetization. The focus of the efforts has been on complex multilayers of magnetic transition elements such as Co and Ni, or Co and Fe with heavier nonmagnetic elements like Pt and Pd. The surprising discovery that CoFeB also shows large PMA opens a new path to the realization of high-performance, perpendicularly magnetized STT-MRAM. The work goes further to demonstrate the incorporation of this interface anisotropy in a device. The work by Ohno and colleagues opens new possibilities for high-performance STT-MRAM, and also poses basic questions.

    UR - http://www.scopus.com/inward/record.url?scp=77956053726&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77956053726&partnerID=8YFLogxK

    U2 - 10.1038/nmat2844

    DO - 10.1038/nmat2844

    M3 - Article

    VL - 9

    SP - 699

    EP - 700

    JO - Nature Materials

    JF - Nature Materials

    SN - 1476-1122

    IS - 9

    ER -