Spin-transfer-induced precessional magnetization reversal

A. D. Kent, B. Özyilmaz, E. Del Barco

    Research output: Contribution to journalArticle

    Abstract

    A magnetoelectronic device concept in which a spin-current pulse can induce a rapid precessional reversal of the magnetization of thin film nanomagent was discussed. The spin switching speed was determined by the precession frequency of the magnetization of a thin film element's demagnetization field. It was observed that thin films with perpendicular anisotropy can be realized in multilayer, such as Co or Fe layered with Pt or Pd 13 or by using shape anisotropy. Results from the micromagnetic simulations show that switching occurs above a threshold pulse current and cab faster than 50 ps.

    Original languageEnglish (US)
    Pages (from-to)3897-3899
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number19
    DOIs
    StatePublished - May 10 2004

    Fingerprint

    magnetization
    thin films
    anisotropy
    demagnetization
    pulses
    precession
    thresholds
    simulation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Spin-transfer-induced precessional magnetization reversal. / Kent, A. D.; Özyilmaz, B.; Del Barco, E.

    In: Applied Physics Letters, Vol. 84, No. 19, 10.05.2004, p. 3897-3899.

    Research output: Contribution to journalArticle

    Kent, AD, Özyilmaz, B & Del Barco, E 2004, 'Spin-transfer-induced precessional magnetization reversal', Applied Physics Letters, vol. 84, no. 19, pp. 3897-3899. https://doi.org/10.1063/1.1739271
    Kent, A. D. ; Özyilmaz, B. ; Del Barco, E. / Spin-transfer-induced precessional magnetization reversal. In: Applied Physics Letters. 2004 ; Vol. 84, No. 19. pp. 3897-3899.
    @article{bbbd216d95f4419a9abe2db365f37246,
    title = "Spin-transfer-induced precessional magnetization reversal",
    abstract = "A magnetoelectronic device concept in which a spin-current pulse can induce a rapid precessional reversal of the magnetization of thin film nanomagent was discussed. The spin switching speed was determined by the precession frequency of the magnetization of a thin film element's demagnetization field. It was observed that thin films with perpendicular anisotropy can be realized in multilayer, such as Co or Fe layered with Pt or Pd 13 or by using shape anisotropy. Results from the micromagnetic simulations show that switching occurs above a threshold pulse current and cab faster than 50 ps.",
    author = "Kent, {A. D.} and B. {\"O}zyilmaz and {Del Barco}, E.",
    year = "2004",
    month = "5",
    day = "10",
    doi = "10.1063/1.1739271",
    language = "English (US)",
    volume = "84",
    pages = "3897--3899",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "19",

    }

    TY - JOUR

    T1 - Spin-transfer-induced precessional magnetization reversal

    AU - Kent, A. D.

    AU - Özyilmaz, B.

    AU - Del Barco, E.

    PY - 2004/5/10

    Y1 - 2004/5/10

    N2 - A magnetoelectronic device concept in which a spin-current pulse can induce a rapid precessional reversal of the magnetization of thin film nanomagent was discussed. The spin switching speed was determined by the precession frequency of the magnetization of a thin film element's demagnetization field. It was observed that thin films with perpendicular anisotropy can be realized in multilayer, such as Co or Fe layered with Pt or Pd 13 or by using shape anisotropy. Results from the micromagnetic simulations show that switching occurs above a threshold pulse current and cab faster than 50 ps.

    AB - A magnetoelectronic device concept in which a spin-current pulse can induce a rapid precessional reversal of the magnetization of thin film nanomagent was discussed. The spin switching speed was determined by the precession frequency of the magnetization of a thin film element's demagnetization field. It was observed that thin films with perpendicular anisotropy can be realized in multilayer, such as Co or Fe layered with Pt or Pd 13 or by using shape anisotropy. Results from the micromagnetic simulations show that switching occurs above a threshold pulse current and cab faster than 50 ps.

    UR - http://www.scopus.com/inward/record.url?scp=2942521523&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=2942521523&partnerID=8YFLogxK

    U2 - 10.1063/1.1739271

    DO - 10.1063/1.1739271

    M3 - Article

    VL - 84

    SP - 3897

    EP - 3899

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 19

    ER -