Spatial and temporal variation of ion flux in the presence of an instability in inductively coupled SF6 plasmas

Tae Won Kim, Eray Aydil

Research output: Contribution to journalArticle

Abstract

A two-dimensional array of planar Langmuir probes on a 200 mm diameter silicon wafer was used in an inductively coupled plasma reactor to follow the spatial and temporal variation of ion flux impinging on the wafer in the presence of an instability. Small amplitude low frequency (∼2 Hz) oscillations superimposed on a steady state ion flux distribution were observed in SF6 plasmas. The magnitude and phase of the oscillations depend on position on the wafer and analysis of these variations reveals that these low frequency oscillations correspond to waves that move across the wafer.

Original languageEnglish (US)
Pages (from-to)148-151
Number of pages4
JournalPlasma Sources Science and Technology
Volume12
Issue number2
DOIs
StatePublished - May 1 2003

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wafers
oscillations
ions
low frequencies
electrostatic probes
reactors
silicon

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Spatial and temporal variation of ion flux in the presence of an instability in inductively coupled SF6 plasmas. / Kim, Tae Won; Aydil, Eray.

In: Plasma Sources Science and Technology, Vol. 12, No. 2, 01.05.2003, p. 148-151.

Research output: Contribution to journalArticle

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