Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors

Aaron D. Franklin, Davood Shahrjerdi, George S. Tulevski, Shu Jen Han, Wilfried Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationMaterial Research Society Fall Meeting, 2011
StatePublished - 2011

Cite this

Franklin, A. D., Shahrjerdi, D., Tulevski, G. S., Han, S. J., & Haensch, W. (2011). Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors. In Material Research Society Fall Meeting, 2011

Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors. / Franklin, Aaron D.; Shahrjerdi, Davood; Tulevski, George S.; Han, Shu Jen; Haensch, Wilfried.

Material Research Society Fall Meeting, 2011. 2011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Franklin, AD, Shahrjerdi, D, Tulevski, GS, Han, SJ & Haensch, W 2011, Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors. in Material Research Society Fall Meeting, 2011.
Franklin AD, Shahrjerdi D, Tulevski GS, Han SJ, Haensch W. Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors. In Material Research Society Fall Meeting, 2011. 2011
Franklin, Aaron D. ; Shahrjerdi, Davood ; Tulevski, George S. ; Han, Shu Jen ; Haensch, Wilfried. / Scaling to sub-100 nm contacts in graphene and carbon nanotube transistors. Material Research Society Fall Meeting, 2011. 2011.
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AU - Haensch, Wilfried

PY - 2011

Y1 - 2011

M3 - Conference contribution

BT - Material Research Society Fall Meeting, 2011

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