Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors

Junghyo Nah, En Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K. Banerjee, Emanuel Tutuc

Research output: Contribution to journalArticle

Abstract

We demonstrate the fabrication of high-performance Ge-SixGe 1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.

Original languageEnglish (US)
Article number5353753
Pages (from-to)491-495
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume57
Issue number2
DOIs
StatePublished - Feb 2010

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Contact resistance
Field effect transistors
Nanowires
D region
Boron
Carrier mobility
Fabrication

Keywords

  • Core-shell
  • Field-effect transistor (FET)
  • Nanowire (NW)
  • Silicon-germanium

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors. / Nah, Junghyo; Liu, En Shao; Varahramyan, Kamran M.; Shahrjerdi, Davood; Banerjee, Sanjay K.; Tutuc, Emanuel.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 2, 5353753, 02.2010, p. 491-495.

Research output: Contribution to journalArticle

Nah, Junghyo ; Liu, En Shao ; Varahramyan, Kamran M. ; Shahrjerdi, Davood ; Banerjee, Sanjay K. ; Tutuc, Emanuel. / Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 2. pp. 491-495.
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