Requirements for plasma synthesis of nanocrystals at atmospheric pressures

N. J. Kramer, Eray Aydil, U. R. Kortshagen

Research output: Contribution to journalArticle

Abstract

While well-defined high quality semiconductor nanocrystals have been synthesized successfully in low pressure nonthermal plasmas, moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for some industrial applications. Here we present a heating and charging model for silicon nanoparticles during their synthesis in plasmas maintained over a wide range of pressures (10-105 Pa). We consider three collisionality regimes and determine the dominant contribution of each regime to heating and charging of nanoparticles under various plasma conditions. For plasmas maintained at atmospheric pressures we find that the ion current is mainly due to the collisional hydrodynamic contribution. Based on the model, we predict that the formation of nanocrystals at atmospheric pressure requires significantly higher plasma densities than those at low pressures. Strong nanoparticle cooling at atmospheric pressures necessitates high ion densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature we estimate the nanoparticle temperature that can be achieved during synthesis at atmospheric pressures and predict that temperatures well above those required for crystallization can be achieved. Based on these results we suggest design principles for nanocrystal synthesis at atmospheric pressures.

Original languageEnglish (US)
Article number035205
JournalJournal of Physics D: Applied Physics
Volume48
Issue number3
DOIs
StatePublished - Jan 28 2015

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Nanocrystals
Atmospheric pressure
atmospheric pressure
nanocrystals
Nanoparticles
Plasmas
nanoparticles
requirements
synthesis
Crystallization
charging
low pressure
Ions
crystallization
Heating
heating
Plasma density
Silicon
Temperature
ion currents

Keywords

  • Low-D systems
  • Nanoscale science
  • Plasma physics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Requirements for plasma synthesis of nanocrystals at atmospheric pressures. / Kramer, N. J.; Aydil, Eray; Kortshagen, U. R.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 3, 035205, 28.01.2015.

Research output: Contribution to journalArticle

@article{90cb99895d074f0ea771653d54a86449,
title = "Requirements for plasma synthesis of nanocrystals at atmospheric pressures",
abstract = "While well-defined high quality semiconductor nanocrystals have been synthesized successfully in low pressure nonthermal plasmas, moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for some industrial applications. Here we present a heating and charging model for silicon nanoparticles during their synthesis in plasmas maintained over a wide range of pressures (10-105 Pa). We consider three collisionality regimes and determine the dominant contribution of each regime to heating and charging of nanoparticles under various plasma conditions. For plasmas maintained at atmospheric pressures we find that the ion current is mainly due to the collisional hydrodynamic contribution. Based on the model, we predict that the formation of nanocrystals at atmospheric pressure requires significantly higher plasma densities than those at low pressures. Strong nanoparticle cooling at atmospheric pressures necessitates high ion densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature we estimate the nanoparticle temperature that can be achieved during synthesis at atmospheric pressures and predict that temperatures well above those required for crystallization can be achieved. Based on these results we suggest design principles for nanocrystal synthesis at atmospheric pressures.",
keywords = "Low-D systems, Nanoscale science, Plasma physics",
author = "Kramer, {N. J.} and Eray Aydil and Kortshagen, {U. R.}",
year = "2015",
month = "1",
day = "28",
doi = "10.1088/0022-3727/48/3/035205",
language = "English (US)",
volume = "48",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Requirements for plasma synthesis of nanocrystals at atmospheric pressures

AU - Kramer, N. J.

AU - Aydil, Eray

AU - Kortshagen, U. R.

PY - 2015/1/28

Y1 - 2015/1/28

N2 - While well-defined high quality semiconductor nanocrystals have been synthesized successfully in low pressure nonthermal plasmas, moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for some industrial applications. Here we present a heating and charging model for silicon nanoparticles during their synthesis in plasmas maintained over a wide range of pressures (10-105 Pa). We consider three collisionality regimes and determine the dominant contribution of each regime to heating and charging of nanoparticles under various plasma conditions. For plasmas maintained at atmospheric pressures we find that the ion current is mainly due to the collisional hydrodynamic contribution. Based on the model, we predict that the formation of nanocrystals at atmospheric pressure requires significantly higher plasma densities than those at low pressures. Strong nanoparticle cooling at atmospheric pressures necessitates high ion densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature we estimate the nanoparticle temperature that can be achieved during synthesis at atmospheric pressures and predict that temperatures well above those required for crystallization can be achieved. Based on these results we suggest design principles for nanocrystal synthesis at atmospheric pressures.

AB - While well-defined high quality semiconductor nanocrystals have been synthesized successfully in low pressure nonthermal plasmas, moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for some industrial applications. Here we present a heating and charging model for silicon nanoparticles during their synthesis in plasmas maintained over a wide range of pressures (10-105 Pa). We consider three collisionality regimes and determine the dominant contribution of each regime to heating and charging of nanoparticles under various plasma conditions. For plasmas maintained at atmospheric pressures we find that the ion current is mainly due to the collisional hydrodynamic contribution. Based on the model, we predict that the formation of nanocrystals at atmospheric pressure requires significantly higher plasma densities than those at low pressures. Strong nanoparticle cooling at atmospheric pressures necessitates high ion densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature we estimate the nanoparticle temperature that can be achieved during synthesis at atmospheric pressures and predict that temperatures well above those required for crystallization can be achieved. Based on these results we suggest design principles for nanocrystal synthesis at atmospheric pressures.

KW - Low-D systems

KW - Nanoscale science

KW - Plasma physics

UR - http://www.scopus.com/inward/record.url?scp=84920761796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920761796&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/48/3/035205

DO - 10.1088/0022-3727/48/3/035205

M3 - Article

VL - 48

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 3

M1 - 035205

ER -