Reliability-based optimisation of chemical vapour deposition process

Pradeep George, Po Ting Lin, Hae Chang Gea, Yogesh Jaluria

Research output: Contribution to journalArticle

Abstract

In this paper, the process of Chemical Vapour Deposition (CVD) in a vertical impinging reactor is simulated and optimised using the reliability-based performance measure approach for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. Proper control of the governing transport processes results in large area film thickness and composition uniformity. The effect of important design parameters and operating conditions are studied using numerical simulations. Response surfaces are generated for deposition rate and uniformity of the deposited film using compromise response surface method for the range of design variables considered. The resulting response surfaces are used to optimise the CVD system by considering the uncertainty in the design variables.

Original languageEnglish (US)
Pages (from-to)363-383
Number of pages21
JournalInternational Journal of Reliability and Safety
Volume3
Issue number4
DOIs
StatePublished - Oct 9 2009

Fingerprint

Chemical vapor deposition
Thin films
Deposition rates
Silanes
Film thickness
Silicon
Computer simulation
Chemical analysis
Uncertainty

Keywords

  • Chemical vapour deposition
  • Compromise response surface method
  • CRSM
  • CVD
  • Performance measure approach
  • PMA
  • RBDO
  • Reliability-based design optimisation
  • Silane
  • Silicon
  • Vertical impinging reactor

ASJC Scopus subject areas

  • Safety, Risk, Reliability and Quality

Cite this

Reliability-based optimisation of chemical vapour deposition process. / George, Pradeep; Lin, Po Ting; Gea, Hae Chang; Jaluria, Yogesh.

In: International Journal of Reliability and Safety, Vol. 3, No. 4, 09.10.2009, p. 363-383.

Research output: Contribution to journalArticle

George, Pradeep ; Lin, Po Ting ; Gea, Hae Chang ; Jaluria, Yogesh. / Reliability-based optimisation of chemical vapour deposition process. In: International Journal of Reliability and Safety. 2009 ; Vol. 3, No. 4. pp. 363-383.
@article{e6a052fdca5b4511a85485eca41e2a59,
title = "Reliability-based optimisation of chemical vapour deposition process",
abstract = "In this paper, the process of Chemical Vapour Deposition (CVD) in a vertical impinging reactor is simulated and optimised using the reliability-based performance measure approach for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. Proper control of the governing transport processes results in large area film thickness and composition uniformity. The effect of important design parameters and operating conditions are studied using numerical simulations. Response surfaces are generated for deposition rate and uniformity of the deposited film using compromise response surface method for the range of design variables considered. The resulting response surfaces are used to optimise the CVD system by considering the uncertainty in the design variables.",
keywords = "Chemical vapour deposition, Compromise response surface method, CRSM, CVD, Performance measure approach, PMA, RBDO, Reliability-based design optimisation, Silane, Silicon, Vertical impinging reactor",
author = "Pradeep George and Lin, {Po Ting} and Gea, {Hae Chang} and Yogesh Jaluria",
year = "2009",
month = "10",
day = "9",
doi = "10.1504/IJRS.2009.028582",
language = "English (US)",
volume = "3",
pages = "363--383",
journal = "International Journal of Reliability and Safety",
issn = "1479-389X",
publisher = "Inderscience Enterprises Ltd",
number = "4",

}

TY - JOUR

T1 - Reliability-based optimisation of chemical vapour deposition process

AU - George, Pradeep

AU - Lin, Po Ting

AU - Gea, Hae Chang

AU - Jaluria, Yogesh

PY - 2009/10/9

Y1 - 2009/10/9

N2 - In this paper, the process of Chemical Vapour Deposition (CVD) in a vertical impinging reactor is simulated and optimised using the reliability-based performance measure approach for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. Proper control of the governing transport processes results in large area film thickness and composition uniformity. The effect of important design parameters and operating conditions are studied using numerical simulations. Response surfaces are generated for deposition rate and uniformity of the deposited film using compromise response surface method for the range of design variables considered. The resulting response surfaces are used to optimise the CVD system by considering the uncertainty in the design variables.

AB - In this paper, the process of Chemical Vapour Deposition (CVD) in a vertical impinging reactor is simulated and optimised using the reliability-based performance measure approach for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. Proper control of the governing transport processes results in large area film thickness and composition uniformity. The effect of important design parameters and operating conditions are studied using numerical simulations. Response surfaces are generated for deposition rate and uniformity of the deposited film using compromise response surface method for the range of design variables considered. The resulting response surfaces are used to optimise the CVD system by considering the uncertainty in the design variables.

KW - Chemical vapour deposition

KW - Compromise response surface method

KW - CRSM

KW - CVD

KW - Performance measure approach

KW - PMA

KW - RBDO

KW - Reliability-based design optimisation

KW - Silane

KW - Silicon

KW - Vertical impinging reactor

UR - http://www.scopus.com/inward/record.url?scp=78651545430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651545430&partnerID=8YFLogxK

U2 - 10.1504/IJRS.2009.028582

DO - 10.1504/IJRS.2009.028582

M3 - Article

VL - 3

SP - 363

EP - 383

JO - International Journal of Reliability and Safety

JF - International Journal of Reliability and Safety

SN - 1479-389X

IS - 4

ER -