Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

Saurabh J. Ullal, Tae Won Kim, Vahid Vahedi, Eray Aydil

Research output: Contribution to journalArticle

Abstract

The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl2 plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.

Original languageEnglish (US)
Pages (from-to)589-595
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number3
DOIs
StatePublished - May 1 2003

Fingerprint

Plasma etching
Chlorine
plasma etching
Silicon
Phase composition
chlorine
Gases
Ions
vapor phases
Fluxes
silicon films
silicon
chambers
plasma composition
ions
Chlorides
Etching
chlorides
etching
Plasmas

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon. / Ullal, Saurabh J.; Kim, Tae Won; Vahedi, Vahid; Aydil, Eray.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 3, 01.05.2003, p. 589-595.

Research output: Contribution to journalArticle

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