Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, Davood Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc

Research output: Contribution to journalArticle

Abstract

We demonstrate dual-gated germanium (Ge)-silicon germanium (Si xGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.

Original languageEnglish (US)
Article number063117
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 2009

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germanium
nanowires
field effect transistors
D region
atomic layer epitaxy
high current
ion implantation
boron
dosage
oxides
silicon
metals
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain. / Nah, Junghyo; Liu, E. S.; Shahrjerdi, Davood; Varahramyan, K. M.; Banerjee, S. K.; Tutuc, E.

In: Applied Physics Letters, Vol. 94, No. 6, 063117, 2009.

Research output: Contribution to journalArticle

Nah, Junghyo ; Liu, E. S. ; Shahrjerdi, Davood ; Varahramyan, K. M. ; Banerjee, S. K. ; Tutuc, E. / Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain. In: Applied Physics Letters. 2009 ; Vol. 94, No. 6.
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