Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement

Michael R. Scimeca, Fan Yang, Edmond Zaia, Nan Chen, Peter Zhao, Madeleine P. Gordon, Jason D. Forster, Yi Sheng Liu, Jinghua Guo, Jeffrey J. Urban, Ayaskanta Sahu

Research output: Contribution to journalArticle

Abstract

Cu 2 Se thin films provide a promising route toward relatively safe, sustainable and solution processed thermoelectric (TE) modules in contrast to more expensive and toxic materials currently on the market such as Bi 2 Te 3 . Cu 2 Se is known in the TE community for its high performance at high temperature and has recently attracted attention from its large theoretically predicted figure of merit at room temperature. Unfortunately, one of the main limitations encountered so far in Cu 2 Se thin films is that the carrier concentrations are not optimized for TE operation after solution processing. In this work, we conduct a comprehensive study of the structural, optical, and TE properties of Cu 2 Se thin films and demonstrate that nonoptimized carrier concentrations in these films lead to observations of poor performance at room temperature. Through a simple soaking procedure in a Cu + ion solution for only a few minutes, we demonstrate a 200-300% increase in power factor. This soaking process pushes the carrier concentration of the Cu 2 Se thin film toward its optimal value for TE operation and marks the highest TE performance for any solution processed Cu 2 Se thin film at room temperature thus far. If the performance can be further optimized at room temperature, Cu 2 Se thin films will be the material of choice to utilize in TE modules for powering miniature electronics and sensors, which has been an increasingly popular and rapidly expanding market.

Original languageEnglish (US)
Pages (from-to)1517-1525
Number of pages9
JournalACS Applied Energy Materials
Volume2
Issue number2
DOIs
StatePublished - Feb 25 2019

Fingerprint

Stoichiometry
Thin films
Carrier concentration
Temperature
Toxic materials
Electronic equipment
Ions
Sensors
Processing

Keywords

  • carrier concentration
  • inorganic
  • p-type
  • stoichiometry control
  • thermoelectric
  • thin films

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Chemical Engineering (miscellaneous)
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Scimeca, M. R., Yang, F., Zaia, E., Chen, N., Zhao, P., Gordon, M. P., ... Sahu, A. (2019). Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement ACS Applied Energy Materials, 2(2), 1517-1525. https://doi.org/10.1021/acsaem.8b02118

Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement . / Scimeca, Michael R.; Yang, Fan; Zaia, Edmond; Chen, Nan; Zhao, Peter; Gordon, Madeleine P.; Forster, Jason D.; Liu, Yi Sheng; Guo, Jinghua; Urban, Jeffrey J.; Sahu, Ayaskanta.

In: ACS Applied Energy Materials, Vol. 2, No. 2, 25.02.2019, p. 1517-1525.

Research output: Contribution to journalArticle

Scimeca, MR, Yang, F, Zaia, E, Chen, N, Zhao, P, Gordon, MP, Forster, JD, Liu, YS, Guo, J, Urban, JJ & Sahu, A 2019, ' Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement ', ACS Applied Energy Materials, vol. 2, no. 2, pp. 1517-1525. https://doi.org/10.1021/acsaem.8b02118
Scimeca, Michael R. ; Yang, Fan ; Zaia, Edmond ; Chen, Nan ; Zhao, Peter ; Gordon, Madeleine P. ; Forster, Jason D. ; Liu, Yi Sheng ; Guo, Jinghua ; Urban, Jeffrey J. ; Sahu, Ayaskanta. / Rapid Stoichiometry Control in Cu 2 Se Thin Films for Room-Temperature Power Factor Improvement In: ACS Applied Energy Materials. 2019 ; Vol. 2, No. 2. pp. 1517-1525.
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