Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration

F. Ferdousi, J. Sarkar, S. Tang, Davood Shahrjerdi, T. Akyol, E. Tutuc, S. K. Banerjee

Research output: Contribution to journalArticle

Abstract

This work presents vertical flash memory devices with protein-assembled PbSe nanocrystals as a floating gate and Al 2O 3 as a control oxide. The advantage of a vertical structure is that it improves cell density. Protein assembly improves uniformity of nanocrystals, which reduces threshold voltage variation among devices. The introduction of Al 2O 3 as a control oxide provided lower voltage/faster operation and hence less power consumption compared with the devices fabricated with SiO 2. The integration of Al 2O 3 appeared to be compatible with the protein assembly approach. In conclusion, Al 2O 3 has the potential to become the high-k control oxide due to its relatively high electron/hole barrier heights, and high permittivity.

Original languageEnglish (US)
Pages (from-to)438-442
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number3
DOIs
StatePublished - Mar 2009

Fingerprint

Flash memory
Nanocrystals
Oxides
flash
nanocrystals
proteins
Proteins
Data storage equipment
oxides
assembly
Threshold voltage
threshold voltage
low voltage
floating
Electric power utilization
Permittivity
permittivity
Electrons
Electric potential
cells

Keywords

  • High-k dielectric
  • Nanocrystal memory devices
  • Protein assembly
  • Vertical structure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration. / Ferdousi, F.; Sarkar, J.; Tang, S.; Shahrjerdi, Davood; Akyol, T.; Tutuc, E.; Banerjee, S. K.

In: Journal of Electronic Materials, Vol. 38, No. 3, 03.2009, p. 438-442.

Research output: Contribution to journalArticle

Ferdousi, F. ; Sarkar, J. ; Tang, S. ; Shahrjerdi, Davood ; Akyol, T. ; Tutuc, E. ; Banerjee, S. K. / Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration. In: Journal of Electronic Materials. 2009 ; Vol. 38, No. 3. pp. 438-442.
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