Probing plasma/surface interactions

Eray Aydil, Richard A. Gottscho

Research output: Contribution to specialist publicationArticle

Abstract

Understanding plasma-surface interactions in plasma etching, deposition, and cleaning is a prerequisite for achieving process goals. Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy is a valuable surface-sensitive diagnostic technique that can be used in situ during plasma process development to detect adsorbed species on surfaces and to monitor the composition of thin films. This article briefly describes the ATR-FTIR technique, and summarizes selected results from silicon surface cleaning and plasma-enhanced chemical vapor deposition (PECVD).

Original languageEnglish (US)
Pages181-190
Number of pages10
Volume40
No10
Specialist publicationSolid State Technology
StatePublished - Oct 1 1997

Fingerprint

Beam plasma interactions
surface reactions
Plasmas
cleaning
Surface cleaning
Plasma etching
plasma etching
Silicon
Plasma enhanced chemical vapor deposition
Fourier transform infrared spectroscopy
Cleaning
Fourier transforms
infrared spectroscopy
vapor deposition
Infrared radiation
Thin films
silicon
thin films
Chemical analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Aydil, E., & Gottscho, R. A. (1997). Probing plasma/surface interactions. Solid State Technology, 40(10), 181-190.

Probing plasma/surface interactions. / Aydil, Eray; Gottscho, Richard A.

In: Solid State Technology, Vol. 40, No. 10, 01.10.1997, p. 181-190.

Research output: Contribution to specialist publicationArticle

Aydil, E & Gottscho, RA 1997, 'Probing plasma/surface interactions' Solid State Technology, vol. 40, no. 10, pp. 181-190.
Aydil E, Gottscho RA. Probing plasma/surface interactions. Solid State Technology. 1997 Oct 1;40(10):181-190.
Aydil, Eray ; Gottscho, Richard A. / Probing plasma/surface interactions. In: Solid State Technology. 1997 ; Vol. 40, No. 10. pp. 181-190.
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