PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN InP AND GaAs FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES.

W. P. Zurawsky, J. E. Littman, H. G. Drickamer

Research output: Contribution to journalArticle

Abstract

The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

Original languageEnglish (US)
Pages (from-to)3216-3219
Number of pages4
JournalJournal of Applied Physics
Volume54
Issue number6
DOIs
StatePublished - Jun 1983

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conduction bands
electrolytes
valence
shift
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN InP AND GaAs FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES. / Zurawsky, W. P.; Littman, J. E.; Drickamer, H. G.

In: Journal of Applied Physics, Vol. 54, No. 6, 06.1983, p. 3216-3219.

Research output: Contribution to journalArticle

@article{af1becca24454669bdd7168da3a8d113,
title = "PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN InP AND GaAs FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES.",
abstract = "The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.",
author = "Zurawsky, {W. P.} and Littman, {J. E.} and Drickamer, {H. G.}",
year = "1983",
month = "6",
doi = "10.1063/1.332483",
language = "English (US)",
volume = "54",
pages = "3216--3219",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN InP AND GaAs FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES.

AU - Zurawsky, W. P.

AU - Littman, J. E.

AU - Drickamer, H. G.

PY - 1983/6

Y1 - 1983/6

N2 - The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

AB - The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

UR - http://www.scopus.com/inward/record.url?scp=0020764258&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020764258&partnerID=8YFLogxK

U2 - 10.1063/1.332483

DO - 10.1063/1.332483

M3 - Article

VL - 54

SP - 3216

EP - 3219

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -