Precessional reversal in orthogonal spin transfer magnetic random access memory devices

H. Liu, D. Bedau, D. Backes, J. A. Katine, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Single-shot time-resolved resistance measurements have been used to determine the magnetization reversal mechanisms of orthogonal spin transfer magnetic random access memory (OST-MRAM) devices at nanosecond time scales. There is a strong asymmetry between antiparallel (AP) to parallel (P) and P to AP transitions under the same pulse conditions. P to AP transitions are shown to occur by precession of the free layer magnetization, while the AP to P transition is typically direct, occurring in less than 200 ps. We associate the asymmetry with spin torques perpendicular to the plane of the free layer, an important characteristic of OST-MRAM bit cells that can be used to optimize device performance.

    Original languageEnglish (US)
    Article number032403
    JournalApplied Physics Letters
    Volume101
    Issue number3
    DOIs
    StatePublished - Jul 16 2012

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    random access memory
    asymmetry
    magnetization
    precession
    shot
    torque
    pulses
    cells

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Precessional reversal in orthogonal spin transfer magnetic random access memory devices. / Liu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Kent, A. D.

    In: Applied Physics Letters, Vol. 101, No. 3, 032403, 16.07.2012.

    Research output: Contribution to journalArticle

    Liu, H. ; Bedau, D. ; Backes, D. ; Katine, J. A. ; Kent, A. D. / Precessional reversal in orthogonal spin transfer magnetic random access memory devices. In: Applied Physics Letters. 2012 ; Vol. 101, No. 3.
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