Potential resolution to the doping puzzle in iron pyrite: Carrier type determination by Hall effect and thermopower

Xin Zhang, Mengqun Li, Jeff Walter, Liam O'Brien, Michael A. Manno, Bryan Voigt, Frazier Mork, Sergey V. Baryshev, James Kakalios, Eray Aydil, Chris Leighton

Research output: Contribution to journalArticle

Abstract

Pyrite FeS2 has outstanding potential as an earth-abundant, low-cost, nontoxic photovoltaic, but underperforms dramatically in solar cells. While the full reasons for this are not clear, one certain factor is the inability to understand and control doping in FeS2. This is exemplified by the widely accepted but unexplained observation that unintentionally doped FeS2 single crystals are predominantly n type, whereas thin films are p type. Here we provide a potential resolution to this "doping puzzle," arrived at via Hall effect, thermopower, and resistivity measurements on a large set of FeS2 single crystals and films that span five orders of magnitude in mobility. The results reveal three main findings. First, in addition to crystals, the highest mobility thin films in this study are shown to be definitively n type, from both Hall effect and thermopower. Second, as mobility decreases an apparent crossover to p type occurs, first in thermopower, then in Hall measurements. This can be understood, however, in terms of the crossover from diffusive to hopping transport that is clearly reflected in resistivity. Third, universal behavior is found for both crystals and films, suggesting a common n dopant, possibly sulfur vacancies. We thus argue that n-type doping is facile in FeS2 films, that apparent p-type behavior in low mobility samples can be an artifact of hopping, and that the prevailing notion of predominantly p-type films must be revised. These conclusions have deep implications, both for interpretation of prior work on FeS2 solar cells and for the design of future studies.

Original languageEnglish (US)
Article number015402
JournalPhysical Review Materials
Volume1
Issue number1
DOIs
StatePublished - Jun 19 2017

Fingerprint

Pyrites
Thermoelectric power
Hall effect
pyrites
Doping (additives)
iron
Solar cells
crossovers
solar cells
Single crystals
Thin films
Crystals
electrical resistivity
single crystals
thin films
Sulfur
doped crystals
Vacancies
crystals
artifacts

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Potential resolution to the doping puzzle in iron pyrite : Carrier type determination by Hall effect and thermopower. / Zhang, Xin; Li, Mengqun; Walter, Jeff; O'Brien, Liam; Manno, Michael A.; Voigt, Bryan; Mork, Frazier; Baryshev, Sergey V.; Kakalios, James; Aydil, Eray; Leighton, Chris.

In: Physical Review Materials, Vol. 1, No. 1, 015402, 19.06.2017.

Research output: Contribution to journalArticle

Zhang, X, Li, M, Walter, J, O'Brien, L, Manno, MA, Voigt, B, Mork, F, Baryshev, SV, Kakalios, J, Aydil, E & Leighton, C 2017, 'Potential resolution to the doping puzzle in iron pyrite: Carrier type determination by Hall effect and thermopower', Physical Review Materials, vol. 1, no. 1, 015402. https://doi.org/10.1103/PhysRevMaterials.1.015402
Zhang, Xin ; Li, Mengqun ; Walter, Jeff ; O'Brien, Liam ; Manno, Michael A. ; Voigt, Bryan ; Mork, Frazier ; Baryshev, Sergey V. ; Kakalios, James ; Aydil, Eray ; Leighton, Chris. / Potential resolution to the doping puzzle in iron pyrite : Carrier type determination by Hall effect and thermopower. In: Physical Review Materials. 2017 ; Vol. 1, No. 1.
@article{50fefb0f4bac46b48c9f5318aa6ada76,
title = "Potential resolution to the doping puzzle in iron pyrite: Carrier type determination by Hall effect and thermopower",
abstract = "Pyrite FeS2 has outstanding potential as an earth-abundant, low-cost, nontoxic photovoltaic, but underperforms dramatically in solar cells. While the full reasons for this are not clear, one certain factor is the inability to understand and control doping in FeS2. This is exemplified by the widely accepted but unexplained observation that unintentionally doped FeS2 single crystals are predominantly n type, whereas thin films are p type. Here we provide a potential resolution to this {"}doping puzzle,{"} arrived at via Hall effect, thermopower, and resistivity measurements on a large set of FeS2 single crystals and films that span five orders of magnitude in mobility. The results reveal three main findings. First, in addition to crystals, the highest mobility thin films in this study are shown to be definitively n type, from both Hall effect and thermopower. Second, as mobility decreases an apparent crossover to p type occurs, first in thermopower, then in Hall measurements. This can be understood, however, in terms of the crossover from diffusive to hopping transport that is clearly reflected in resistivity. Third, universal behavior is found for both crystals and films, suggesting a common n dopant, possibly sulfur vacancies. We thus argue that n-type doping is facile in FeS2 films, that apparent p-type behavior in low mobility samples can be an artifact of hopping, and that the prevailing notion of predominantly p-type films must be revised. These conclusions have deep implications, both for interpretation of prior work on FeS2 solar cells and for the design of future studies.",
author = "Xin Zhang and Mengqun Li and Jeff Walter and Liam O'Brien and Manno, {Michael A.} and Bryan Voigt and Frazier Mork and Baryshev, {Sergey V.} and James Kakalios and Eray Aydil and Chris Leighton",
year = "2017",
month = "6",
day = "19",
doi = "10.1103/PhysRevMaterials.1.015402",
language = "English (US)",
volume = "1",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "1",

}

TY - JOUR

T1 - Potential resolution to the doping puzzle in iron pyrite

T2 - Carrier type determination by Hall effect and thermopower

AU - Zhang, Xin

AU - Li, Mengqun

AU - Walter, Jeff

AU - O'Brien, Liam

AU - Manno, Michael A.

AU - Voigt, Bryan

AU - Mork, Frazier

AU - Baryshev, Sergey V.

AU - Kakalios, James

AU - Aydil, Eray

AU - Leighton, Chris

PY - 2017/6/19

Y1 - 2017/6/19

N2 - Pyrite FeS2 has outstanding potential as an earth-abundant, low-cost, nontoxic photovoltaic, but underperforms dramatically in solar cells. While the full reasons for this are not clear, one certain factor is the inability to understand and control doping in FeS2. This is exemplified by the widely accepted but unexplained observation that unintentionally doped FeS2 single crystals are predominantly n type, whereas thin films are p type. Here we provide a potential resolution to this "doping puzzle," arrived at via Hall effect, thermopower, and resistivity measurements on a large set of FeS2 single crystals and films that span five orders of magnitude in mobility. The results reveal three main findings. First, in addition to crystals, the highest mobility thin films in this study are shown to be definitively n type, from both Hall effect and thermopower. Second, as mobility decreases an apparent crossover to p type occurs, first in thermopower, then in Hall measurements. This can be understood, however, in terms of the crossover from diffusive to hopping transport that is clearly reflected in resistivity. Third, universal behavior is found for both crystals and films, suggesting a common n dopant, possibly sulfur vacancies. We thus argue that n-type doping is facile in FeS2 films, that apparent p-type behavior in low mobility samples can be an artifact of hopping, and that the prevailing notion of predominantly p-type films must be revised. These conclusions have deep implications, both for interpretation of prior work on FeS2 solar cells and for the design of future studies.

AB - Pyrite FeS2 has outstanding potential as an earth-abundant, low-cost, nontoxic photovoltaic, but underperforms dramatically in solar cells. While the full reasons for this are not clear, one certain factor is the inability to understand and control doping in FeS2. This is exemplified by the widely accepted but unexplained observation that unintentionally doped FeS2 single crystals are predominantly n type, whereas thin films are p type. Here we provide a potential resolution to this "doping puzzle," arrived at via Hall effect, thermopower, and resistivity measurements on a large set of FeS2 single crystals and films that span five orders of magnitude in mobility. The results reveal three main findings. First, in addition to crystals, the highest mobility thin films in this study are shown to be definitively n type, from both Hall effect and thermopower. Second, as mobility decreases an apparent crossover to p type occurs, first in thermopower, then in Hall measurements. This can be understood, however, in terms of the crossover from diffusive to hopping transport that is clearly reflected in resistivity. Third, universal behavior is found for both crystals and films, suggesting a common n dopant, possibly sulfur vacancies. We thus argue that n-type doping is facile in FeS2 films, that apparent p-type behavior in low mobility samples can be an artifact of hopping, and that the prevailing notion of predominantly p-type films must be revised. These conclusions have deep implications, both for interpretation of prior work on FeS2 solar cells and for the design of future studies.

UR - http://www.scopus.com/inward/record.url?scp=85056396635&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056396635&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.1.015402

DO - 10.1103/PhysRevMaterials.1.015402

M3 - Article

VL - 1

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 1

M1 - 015402

ER -