Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

B. Hekmatshoar, Davood Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, E. Asl Soliemani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 10 4 and an effective hole mobility of 110 cm 2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsN. Fruehauf, B.R. Chalamala, B.E. Gnade, J. Jang
Pages101-105
Number of pages5
Volume814
StatePublished - 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Other

OtherFlexible Electronics 2004 - Materials and Device Technology
CountryUnited States
CitySan Francisco, CA
Period4/13/044/16/04

Fingerprint

Germanium
Thin film transistors
Plastics
Crystallization
Fabrication
Polyethylene Terephthalates
Hole mobility
Polyethylene terephthalates
Temperature
Annealing
Crystalline materials
Substrates
Si-Ge alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Robertson, M., & Asl Soliemani, E. (2004). Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors. In N. Fruehauf, B. R. Chalamala, B. E. Gnade, & J. Jang (Eds.), Materials Research Society Symposium Proceedings (Vol. 814, pp. 101-105)

Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors. / Hekmatshoar, B.; Shahrjerdi, Davood; Mohajerzadeh, S.; Khakifirooz, A.; Robertson, M.; Asl Soliemani, E.

Materials Research Society Symposium Proceedings. ed. / N. Fruehauf; B.R. Chalamala; B.E. Gnade; J. Jang. Vol. 814 2004. p. 101-105.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hekmatshoar, B, Shahrjerdi, D, Mohajerzadeh, S, Khakifirooz, A, Robertson, M & Asl Soliemani, E 2004, Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors. in N Fruehauf, BR Chalamala, BE Gnade & J Jang (eds), Materials Research Society Symposium Proceedings. vol. 814, pp. 101-105, Flexible Electronics 2004 - Materials and Device Technology, San Francisco, CA, United States, 4/13/04.
Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Asl Soliemani E. Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors. In Fruehauf N, Chalamala BR, Gnade BE, Jang J, editors, Materials Research Society Symposium Proceedings. Vol. 814. 2004. p. 101-105
Hekmatshoar, B. ; Shahrjerdi, Davood ; Mohajerzadeh, S. ; Khakifirooz, A. ; Robertson, M. ; Asl Soliemani, E. / Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors. Materials Research Society Symposium Proceedings. editor / N. Fruehauf ; B.R. Chalamala ; B.E. Gnade ; J. Jang. Vol. 814 2004. pp. 101-105
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