Plasma passivation of III-V semiconductor surfaces

Eray Aydil, R. A. Gottscho

Research output: Contribution to journalArticle

Abstract

Poor electronic properties of III-V semiconductor surfaces and semiconductor-insulator interfaces resulting from a high density of surface/interface states limit III-V device technology. For this reason, passivation of III-V surfaces, in particular plasma passivation, has received attention in the last two decades. In this chapter, we review these research efforts with emphasis on in situ and real-time diagnostic methods to detect chemical and electronic changes on surfaces upon passivation. Hydrogen-atom based plasma passivation techniques, using H2, NH3, and H2S, have emerged as viable methods for removing surface states and native oxides. Improvements in III-V device performance can be made with judicious choice of the plasma operating parameters such as plasma excitation method, pressure, power, flow rate and substrate temperature. In situ and real-time surface diagnostic methods, such as photoluminescence monitoring and attenuated-total-reflection Fourier transform infrared spectroscopy (ATR-FTIR), are crucial for optimizing the process conditions.

Original languageEnglish (US)
Pages (from-to)159-188
Number of pages30
JournalMaterials Science Forum
Volume148-4
StatePublished - Dec 1 1994

Fingerprint

Passivation
passivity
Plasmas
Interface states
Surface states
Electronic properties
Oxides
Fourier transform infrared spectroscopy
Hydrogen
Photoluminescence
electronics
Flow rate
III-V semiconductors
hydrogen atoms
Semiconductor materials
flow velocity
Atoms
infrared spectroscopy
insulators
Monitoring

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Plasma passivation of III-V semiconductor surfaces. / Aydil, Eray; Gottscho, R. A.

In: Materials Science Forum, Vol. 148-4, 01.12.1994, p. 159-188.

Research output: Contribution to journalArticle

Aydil, Eray ; Gottscho, R. A. / Plasma passivation of III-V semiconductor surfaces. In: Materials Science Forum. 1994 ; Vol. 148-4. pp. 159-188.
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